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Method for wet impurity removal of industrial silicon

An industrial silicon and wet technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve problems such as difficult to achieve deep impurity removal, and achieve the effect of easy operation, simple equipment, and increased contact opportunities

Inactive Publication Date: 2015-03-11
KUNMING UNIV OF SCI & TECH
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  • Abstract
  • Description
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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that the current industrial silicon wet purification is difficult to achieve deep impurity removal, and to provide a method for industrial silicon wet impurity removal. Assisted etching (MACE) method "drills" a large number of nano-scale channels on the surface and inside of silicon powder, and then combines acid leaching treatment to achieve the purpose of deep removal of impurities in industrial silicon materials. The specific process is as follows:

Method used

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  • Method for wet impurity removal of industrial silicon

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Experimental program
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Effect test

Embodiment 1

[0024] (1) Pretreatment of silicon material: crush and grind industrial silicon material (purity: 99.8wt%), wash silicon powder (0.5~50μm) with deionized water, soak the silicon powder with HF with a concentration of 1wt% for 120min, Its liquid-solid ratio is 4:1, the soaking temperature is between 80 °C, and then it is washed with deionized water, filtered and separated;

[0025] (2) Introduction of porous structure: With the help of the catalysis of metal nanoparticles, a one-step metal nanoparticle-assisted etching method is used at 10 °C to etch nano-scale pores on the surface and inside of industrial silicon powder; the one-step metal nanoparticles In the auxiliary etching method, the deposition of metal nanoparticles and the etching of silicon powder are carried out simultaneously in the same reaction system, and the selected reaction system is HF / AgNO 3 The reaction system was stirred in a dark room (rotation speed: 180 rpm) for 48 h. In the mixed solution, the concentr...

Embodiment 2

[0029] (1) Pretreatment of silicon material: crush and grind industrial silicon material (purity: 99.8wt%), clean silicon powder (50~150μm) with deionized water, soak the silicon powder with HF with a concentration of 5wt% for 100min, The liquid-solid ratio is 3:1, the soaking temperature is between 10 °C, and then it is washed with deionized water, filtered and separated;

[0030](2) Introduction of porous structure: With the help of the catalysis of metal nanoparticles, a one-step metal nanoparticle-assisted etching method was used at 100 °C to etch nano-scale pores on the surface and inside of industrial silicon powder; the selected reaction system was HF / KAuCl 4 The mixed solution of , the concentration of HF in the mixed solution is 0.1mol / L, KAuCl 4 The concentration is 5mol / L, and the etching time is 20h;

[0031] (3) Removal of metal nanoparticles: The porous industrial silicon powder containing nano metal particles obtained in step (2) is soaked in an ammonia solut...

Embodiment 3

[0034] (1) Pretreatment of silicon material: crush and grind industrial silicon material (purity: 99.8wt%), clean silicon powder (150~250μm) with deionized water, soak the silicon powder with HF with a concentration of 12wt% for 80min, Its liquid-solid ratio is 5:1, the soaking temperature is between 30 °C, and then it is washed with deionized water, filtered and separated;

[0035] (2) Introduction of porous structure: With the help of the catalysis of metal nanoparticles, a one-step metal nanoparticle-assisted etching method was used at 25 °C to etch nano-scale pores on the surface and inside of industrial silicon powder; the selected reaction system was HF / K 2 PtCl 6 solution, the concentration of HF in the mixed solution is 33mol / L, K 2 PtCl 6 The concentration is 10 mol / L, and the etching time is 0.1h;

[0036] (3) Removal of metal nanoparticles: The porous industrial silicon powder containing nano metal particles obtained in step (2) was soaked in a hydrogen peroxid...

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Abstract

The invention discloses a method for wet impurity removal of industrial silicon, and belongs to the technical field of the preparation of highly pure silicon through wet purification. The method is provided to solve the practical problem of difficult advanced impurity removal due to wrapping of impurities in silicon in the wet purification process of the industrial silicon. The method is characterized in that a large amount of nanopores are drilled on the surface of a silicon material and in the silicon material through a metal nanoparticle assisted etching (MACE) technology in order to make the wrapped impurities fully exposed, and acid dipping treatment is combined to achieve the advanced removal of the impurities in the industrial silicon material. The method has the advantages of simple equipment requirements, easy operation, and suitableness for scale industrial production.

Description

technical field [0001] The invention relates to a method for industrial silicon wet impurity removal, belonging to the technical field of wet purification and preparation of high-purity silicon. Background technique [0002] With the increasing depletion of fossil energy and the continuous improvement of environmental protection awareness, finding an efficient and environmentally friendly alternative energy has become an international problem that domestic and foreign scientific researchers urgently need to solve. Solar power generation has high expectations due to its advantages of clean and pollution-free, relatively extensive and sufficient resources, and long life, and has become a hot research topic in various countries today. Among many solar cell materials, polysilicon is undoubtedly the most widely used conversion material. How to obtain solar-grade polysilicon at low cost has become an important factor that directly affects the development of solar cells. Among the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/037
Inventor 马文会李绍元魏奎先伍继君谢克强杨斌戴永年
Owner KUNMING UNIV OF SCI & TECH
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