wavy mos 2 Nanosheet inlaid dandelion tio 2 Nanosphere composite heterojunction semiconductor material and preparation method thereof

A composite heterojunction and dandelion technology, applied in chemical instruments and methods, chemical/physical processes, physical/chemical process catalysts, etc., can solve problems such as inapplicability to large-scale industrial production, complex synthesis processes, and high production costs. Achieve low cost, enhanced catalytic performance, and high reproducibility
CN104437555BInactive Publication Date: 2017-05-24EAST CHINA NORMAL UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
EAST CHINA NORMAL UNIV
Publication Date
2017-05-24
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention discloses a wave-MoS2 nanosheet embedded dandelion TiO2 composite nanospheres heterojunction semiconductor material, said sheet material comprises MoS2 nano-TiO2 dandelion and nanospheres; wherein the MoS2 nano TiO2 sheet uniformly throughout the nanosphere dandelion nanorods on the middle, and stably associated with a gap between the nano rod. The present invention also discloses a method for preparing nano-sheet obtained through a two-wave MoS2 solvothermal mosaic dandelion TiO2 composite nanospheres heterojunction semiconductor material. Preparation of the present invention is simple operation, high output, and low cost. Material of the invention has great development potential and applications in the field of wastewater and industrial catalysis field emission light.
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Description

technical field

[0001] The invention belongs to the technical field of optoelectronic materials, semiconductor materials and devices, and in particular relates to a wave MoS 2 Nanosheet mosaic dandelion TiO 2 Nanosphere composite heterojunction semiconductor material and its preparation method. Background technique

[0002] MoS 2 It is a metal sulfide with a narrow band gap, and it is also a typical two-dimensional layered semiconductor material. The layers are combined by weak van der Waals forces, making MoS 2 It has a wide range of applications in lithium-ion batteries, photocatalysis, field emission and sensors. Rutile TiO 2 It is a metal oxide with a wide bandgap, a three-dimensional semiconductor material that is easy to prepare and easy to undergo structural modification, TiO 2 Due to its special spherical structure and large (001) active surface, dandelion nanospheres are most commonly used in photocatalysis.

[0003] Recently, the academic community has begun ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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