Silicon material cleaning technology and equipment

Abstract

The invention discloses a silicon material cleaning technology and equipment which can prevent a silicon dioxide layer from being formed on the surface of a silicon material during cleaning of the silicon material. The silicon material cleaning technology comprises the steps that firstly, the silicon material needing to be cleaned is placed into the centrifugal equipment; the centrifugal equipment is started to enable the silicon material to rotate, pure water is injected into the centrifugal equipment to clean the silicon material in the rotating process of the silicon material, pure water is stopped from being sprinkled towards the silicon material after cleaning is completed, the rotation speed of the centrifugal equipment is adjusted to 305-330 r / m for spin-drying processing, and inert gas at the temperature of 60-120 DEG C is led to the silicon material in the spin-drying process. According to the cleaning technology, the insert gas is used for baking the silicon material, the silicon material will not make contact with oxygen under the protection of the inert gas, the silicon dioxide layer will not be formed on the surface of the silicon layer, therefore, the silicon material without the silicon dioxide layer on the surface can be molten easily when the silicon material needs to be molten in a subsequent technology, and energy consumption is reduced. The silicon material cleaning technology and equipment are suitable for being applied and popularized in the field of solar cells.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a silicon material cleaning process and equipment thereof. Background technique [0002] The principle of solar cells is mainly based on the semiconductor material silicon, and impurities are doped into the silicon crystal by means of a diffusion process: when impurities such as boron and phosphorus are doped, there will be a hole in the silicon crystal to form an n-type semiconductor; , after doping phosphorus atoms, there will be an electron in the silicon crystal to form a p-type semiconductor, and the p-type semiconductor and n-type semiconductor will combine to form a pn junction. When sunlight irradiates the silicon crystal, the n-type semiconductor in the pn junction Holes move to the p-type region, while electrons in the p-type region move to the n-type region, thereby forming a current from the n-type region to the p-type region, forming a potential difference in the pn juncti...

AI Technical Summary

Problems solved by technology

At present, the silicon material is cleaned with pure water first, and then baked in a constant temperature oven. Although this silicon material cleaning process can remove impurities on the surface of the silicon material, it is difficult to clean the silicon material during the baking process. Among them, the surface of the silicon material is easily oxidized to form a silicon dioxide layer, and the silicon dioxide layer on the surface of the silicon material is difficult to melt. In the subsequent process, it takes a long time at a high temperature to form a silicon dioxide layer on the surface. The silicon material is melted, which requires more power consumption and higher energy consumption, resulting in higher production costs

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