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A method for reducing the phase transition temperature of vanadium dioxide thin film

A vanadium dioxide, phase transition temperature technology, applied in chemical instruments and methods, heat exchange materials, coatings, etc., can solve the problem of high phase transition temperature, achieve lower phase transition temperature, good optical performance, and excellent optical performance Effect

Inactive Publication Date: 2016-09-14
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Undoped vanadium dioxide thin films have quite high infrared modulation efficiency, but the phase transition temperature is much higher than room temperature

Method used

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  • A method for reducing the phase transition temperature of vanadium dioxide thin film
  • A method for reducing the phase transition temperature of vanadium dioxide thin film
  • A method for reducing the phase transition temperature of vanadium dioxide thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Take the undoped M-phase vanadium dioxide film prepared by the inorganic sol-gel method, measure the thermal hysteresis loop of the film at 2000nm, the measured phase transition temperature of the film is 64.7°C, and the width of the thermal hysteresis loop is 13°C. like figure 1 The solid line shown is the thermal hysteresis loop measured at 2000 nm for the vanadium dioxide film prepared in advance. figure 2 The solid line shown in is the transmission curve of the sample measured under the temperature conditions of 25°C and 90°C.

[0036] The sample is placed in a tube-type retracting furnace, evacuated to a vacuum of 2000 Pa, and the vacuum pump is continuously turned on to keep the vacuum constant.

[0037] Set the heating rate of the tubular annealing furnace to 5°C / min, raise the temperature to 300°C and hold it for 3h. Then cool with the furnace.

[0038] By measuring the thermal hysteresis loop of the above-mentioned undoped vanadium dioxide film at 2000 nm, ...

Embodiment 2

[0040] Get the tungsten-doped (1%) M-phase vanadium dioxide film prepared by the inorganic sol-gel method, measure the thermal hysteresis loop of the film at 2000nm (such as image 3 solid line shown) and transmission curves (such as Figure 4 Shown as the solid line), the phase transition temperature of the thin film is 47.5°C, and the width of the thermal hysteresis loop is 22°C.

[0041] The operation steps are the same as in Example 1, and the process conditions of step 2) are: evacuate to a vacuum degree of 2000 Pa, then feed Ar to normal pressure, and keep a relative vacuum. The process condition of step 3) is that the heating rate is 5° C. / min, the temperature is raised to 310° C. and kept for 3 hours, and naturally cooled in an Ar atmosphere furnace after the heat preservation is completed.

[0042] By measuring the thermal hysteresis loop of the tungsten-doped (1%) vanadium dioxide film at 2000 nm, it is obtained that the phase transition temperature of the film is 42....

Embodiment 3

[0044] Get the undoped M-phase vanadium dioxide film prepared by magnetron sputtering, measure the thermal hysteresis loop of the film at 2000nm (such as Figure 5 Shown as the solid line), the measured phase transition temperature of the film is 49°C, and the width of the thermal hysteresis loop is 23°C.

[0045] The operating steps are the same as in Example 1, and the process conditions of step 2) are: vacuumize to a vacuum degree of 1000 Pa, and continuously open the vacuum pump to maintain a high vacuum. The process condition of step 3) is that the heating rate is 10° C. / min, the temperature is raised to 320° C. and kept for 2 hours, and naturally cooled in the furnace after the heat preservation is completed.

[0046] By measuring the thermal hysteresis loop of the above-mentioned undoped vanadium dioxide film at 2000 nm, it is measured that the phase transition temperature of the film is 43° C., and the width of the thermal hysteresis loop is 21° C. like Figure 5 sho...

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Abstract

The invention discloses a method for reducing the phase change temperature of a vanadium dioxide film. The method comprises the following steps: 1) preparing an M-phase vanadium dioxide film with a phase change function, wherein the M-phase vanadium dioxide film is formed on a substrate; 2) putting an M-phase vanadium dioxide film sample prepared in the step 1) into an annealing device, vacuumizing the annealing device till the vacuum degree is 200-2000 Pa, keeping the vacuum degree, or vacuumizing till the vacuum degree is 200-2000 Pa, subsequently introducing inert gas to the standard atmospheric pressure, heating to be 280-320 DEG C, keeping the temperature for 0.5-3 hours, and natural cooling to be the room temperature in a furnace, thereby obtaining the vanadium dioxide film with reduced phase change temperature. By adopting the method, the phase change temperature of a pure vanadium dioxide film can be reduced, and the phase change temperature of a doped vanadium dioxide film can also be reduced, so that the method has a very wide application range. In addition, the method is low in treatment temperature, simple in process, good in safety and wide in application prospect in the field of high-end photoelectric functional materials.

Description

technical field [0001] The invention belongs to the technical field of preparation of functional thin films, and in particular relates to a method for reducing the phase transition temperature of vanadium dioxide thin films. Background technique [0002] Vanadium dioxide has semiconductor-metal phase transition (MIT) properties and is a smart thermochromic material. At 68°C, vanadium dioxide transforms from a low-temperature monoclinic semiconductor phase to a high-temperature tetragonal metal phase. Along with the semiconductor-metal phase transition, its electrical, optical, and magnetic properties undergo reversible changes. Therefore, vanadium dioxide has very important application value in many fields such as intelligent energy-saving windows, infrared detection, optical switches, and optical storage. [0003] Powdered or single crystal vanadium dioxide undergoes multiple phase transitions that can cause the material to crack or break into pieces. The vanadium dioxide...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/23C04B41/50C09K5/06
CPCC03C17/23C03C2217/21C04B41/5072
Inventor 陶海征赵新宇赵修建
Owner WUHAN UNIV OF TECH