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Composite alkali polishing solution for sapphire substrate material and recycling method thereof

A sapphire substrate and polishing liquid technology, applied in the field of CMP polishing liquid, can solve problems such as low efficiency and low polishing rate, and achieve the effects of reducing cost, improving polishing efficiency and reducing damaged layer

Inactive Publication Date: 2015-03-25
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to overcome the deficiency of above-mentioned technology, provide a kind of composite alkali polishing fluid of sapphire substrate material and recycling method thereof, polishing fluid adopts the form of composite alkali, the strong alkalinity of inorganic alkali can effectively improve polishing removal rate, The polyhydroxy organic base ensures the stability of the pH of the polishing liquid by continuously releasing hydroxyl groups, thereby ensuring the chemical action of the polishing liquid during the cyclic polishing process, and solving the technical problems of low polishing rate and low efficiency

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Prepare 10kg compound alkali polishing solution for sapphire substrate and use it for circular polishing

[0023] Take 5000g particle size 15nm SiO 2 Add the hydrosol to 4775g of deionized water while stirring, then add 5g of FA / O Type I surfactant and 10g of FA / O Type II chelating agent while stirring, and then add a pH regulator to adjust the pH value to 9 . Wherein the pH regulator is to get KOH 9g and dilute it with 200g deionized water, get 1g of tetrahydroxyethylethylenediamine, add it into the KOH aqueous solution while stirring and fully mix it as a compound alkali pH regulator. After stirring evenly, carry out circular polishing, each cycle time is 1 hour, and examine the change of removal rate in each cycle. Pressure: 0.08Mpa; Speed: 40rpm; Flow rate: 100ml / min. The results were: the removal rate was 4.02 μm / h in the first hour of circulation, 2.89 μm / h in the second hour of circulation, and 1.59 μm / h in the third hour of circulation.

Embodiment 2

[0025] Prepare 10kg compound alkali polishing solution for sapphire substrate and use it for circular polishing

[0026] Take 2500g particle size 150nm SiO 2 Hydrosol, then add it to 7100g of deionized water while stirring, then add 50g of FA / O Type I surfactant and 50g of FA / O Type II chelating agent while stirring, then add a pH regulator to adjust the pH value to 11.5 . Wherein the pH regulator is to get 80g of KOH and dilute it with 200g of deionized water, take 20g of triethanolamine while stirring and add it into the KOH aqueous solution and fully mix it as the pH regulator.

[0027] After stirring evenly, carry out circular polishing, each cycle time is 1 hour, and examine the change of removal rate in each cycle. Pressure: 0.12Mpa; Speed: 60rpm; Flow: 300ml / min. The results are: the removal rate of the first cycle is 5.23 μm / h, the removal rate of the second cycle is 3.88 μm / h, and the removal rate of the second cycle is 1.98 μm / h.

Embodiment 3

[0029] Prepare 10kg compound alkali polishing solution for sapphire substrate and use it for circular polishing

[0030] Take 5000g particle size 80nm SiO 2 The hydrosol was added into 5000g of deionized water while stirring, and then 100g of FA / O Type I surfactant, 100g of FA / O Type II chelating agent were added while stirring, and the pH value of the pH regulator was adjusted to 13. Among them, 150g of KOH is taken as the pH regulator, diluted with 200g of deionized water, and 50g of tetrahydroxyethylethylenediamine is taken, and added into the KOH aqueous solution while stirring and fully mixed. After stirring evenly, carry out circular polishing, each cycle time is 1 hour, and examine the change of removal rate in each cycle. Pressure: 0.2Mpa; Speed: 60rpm; Flow: 200ml / min. The results are: the removal rate of the first cycle is 6.56 μm / h, the removal rate of the second cycle is 4.15 μm / h, and the removal rate of the third cycle is 2.67 μm / h.

[0031] The FA / O Type I su...

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PUM

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Abstract

The invention relates to a composite alkali polishing solution for a sapphire substrate material. The composite alkali polishing solution comprises the following main components in percentage by weight: 10%-50% of 2wt%-50wt%nanometer SiO2 hydrosol with the particle diameter of 15-150 nanometers, 0.05%-1% of active agents, 0.1%-1% of chelating agents and 0.1%-2% of pH regulating agents, wherein the pH regulating agents are composite alkali formed by a mixture of inorganic alkali and organic alkali. The recycling steps are as follows: the flow rate of polishing solution is 100-300 grams / minute, the polishing pressure is 0-0.2 MPa, the polishing rotation speed is 40-60 rpm, and the polishing temperature is 30-40 DEG C. The composite alkali polishing solution disclosed by the invention has the has the beneficial effects that a composite alkali mode is adopted, the inorganic alkali can effectively increase the polishing removal velocity through strong alkalinity, ensure the stability of the pH of the polishing solution by continuously releasing hydroxy and ensure the chemical effect of the polishing solution in a circular polishing process and the technical problems of low polishing velocity and low efficiency are solved.

Description

technical field [0001] The invention belongs to a CMP polishing liquid and a use method thereof, in particular to a compound alkali polishing liquid for a sapphire substrate material and a recycling method thereof. Background technique [0002] Sapphire single crystal (Sapphire), also known as white gem, the molecular formula is Al 2 o 3 , transparent, has the same optical and mechanical properties as natural gemstones, has good thermal properties, excellent electrical and dielectric properties, and chemical corrosion resistance, high infrared transmittance, and good wear resistance Its hardness is second only to diamond, with a Ta Mok's grade of 9. It still has good stability at high temperatures, and its melting point is 2030 ° C. Therefore, it is widely used in industry, national defense, scientific research and other fields, and is increasingly used as Manufacturing materials for parts in high-tech fields such as solid-state lasers, infrared windows, substrates for sem...

Claims

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Application Information

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IPC IPC(8): C09G1/02H01L21/306
CPCC09G1/02H01L21/02013
Inventor 牛新环高宝红孙鸣王如王娟刘玉岭
Owner HEBEI UNIV OF TECH
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