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Tinning processing method for Bi2Te3 matrix and supplement

A technology of a bismuth telluride substrate and a processing method, which is applied in the field of material surface processing, can solve the problems of high production cost, difficult maintenance, poor bonding force between an electroless nickel plating layer and an electroplated tin layer, etc., and achieves low production cost and good controllability. Effect

Active Publication Date: 2015-03-25
鹏南科技(厦门)有限公司
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Problems solved by technology

It can be seen that the prior art adopts the method of electroless nickel plating to realize metallization on the surface of semiconductor Bi2Te3. defect

Method used

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Embodiment Construction

[0014] The present invention proposes a tin-plating processing method for a bismuth telluride substrate (such as a bismuth telluride temperature difference cooling chip), which is a process for direct electroplating nickel, including the following steps:

[0015] A, Steps for ultrasonic alkaline degreasing: place the bismuth telluride substrate in solution A dissolved in ultrasonic degreasing agent for ultrasonic degreasing to remove the grease on the surface of the substrate. Ultrasonic degreasing uses physical properties to degrease. It has good cleaning effect and will not introduce too much impurity interference from chemical cleaners, so as to avoid affecting the subsequent electroplating process. Among them, the ultrasonic degreasing treatment technology is a degreasing cleaning technology commonly used in the prior art. The ultrasonic degreasing agent can also be selected from commonly used components, and its temperature and concentration can also be adjusted as needed....

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Abstract

The invention relates to the field of material surface working, and provides a tinning processing method for a Bi2Te3 matrix. The tinning processing method comprises the following steps: A, ultrasonic alkali degreasing; B, sulfuric acid neutralization and activation; C, primer nickel electroplating; D, electrotinning; and E, tining layer protection processing. The invention further provides a supplement. The supplement comprises components in percentage by mass as follows: 0.15% plus or minus 0.01% of propargyl alcohol, 0.15% plus or minus 0.01% of dibenzenesulfonimide, 0.12% plus or minus 0.02% of butynediol, 0.35% plus or minus 0.03% of sodium dodecyl sulfate, 0.02% plus or minus 0.01% of saccharin and the balance of deionized water. The tinning processing method is used for surface processing of the Bi2Te3 matrix, tinning processing is performed, and a welded tin surface layer welded with a substrate is formed.

Description

technical field [0001] The invention relates to the field of material surface processing, in particular to a tin-plating processing method for a bismuth telluride substrate and a supplement for electroplating. Background technique [0002] Bismuth telluride (Bi2Te3) is an important material for the production of semiconductors. It has good temperature difference cooling, but poor conductivity. Bismuth telluride can allow electrons to move on its surface without energy consumption at room temperature, which will bring a leap in the operating speed of chips, and even greatly improve the operating speed and work efficiency of computer chips. However, Bi2Te3 cannot be electroplated with tin alloy directly, and needs to be metallized on its surface in advance. In order to connect the bismuth telluride sheet to the substrate, a layer of metal soldering layer must be covered on its surface; usually the surface is tinned or gold-plated, but bismuth telluride itself is a semiconduct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D5/12C25D3/16C25D3/30C25D7/12
CPCC25D3/16C25D3/30C25D5/12C25D7/12
Inventor 李南生陈天顺周创举张现福
Owner 鹏南科技(厦门)有限公司
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