Method for forming double pattern
A double-patterned and patterned technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of double-pattern deformation, affecting the accuracy of etching patterns, etc., to avoid tilting or collapse and ensure accuracy. Effect
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[0038] As mentioned in the background art, the double pattern structure formed in the prior art is prone to deformation, which affects the accuracy of the subsequently formed etching pattern.
[0039] Research has found that in the prior art, the ashing process is usually used to remove the sacrificial layer, and after the ashing process is performed to remove the sacrificial layer, the residual material of the sacrificial layer must be removed by solution cleaning to avoid the impact of residual particles on the subsequent process is affected. After cleaning, further drying treatment is required to remove the residual aqueous solution on the sidewall and the surface of the layer to be etched. Since the material of the sidewalls is mostly silicon oxide or silicon nitride, and the silicon oxide or silicon nitride is a hydrophilic material, during the drying process, as the aqueous solution between adjacent sidewalls gradually decreases , due to the hydrophilic effect between t...
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