Preparation method of two-dimensional gallium telluride material

Abstract

The invention discloses a preparation method of a two-dimensional gallium telluride material, which is used for solving the technical problem of small area of the gallium telluride material prepared by the existing preparation method. The technical scheme is based on the existing micromechanical stripping method, and temperature, pressure and other parameters are introduced in the transferring process to enhance the size of the two-dimensional GaTe material. On the basis of the original micromechanical stripping method comprising the steps of stripping and transferring, a three-step micromechanical stripping method comprising the steps of stripping, transferring and stripping is designed. In the transferring process, annealing treatment is performed at 90-110 DEG C under the applied pressure of 105Pa. Finally, a Scotch tape is utilized to perform stripping operation, thereby further thinning the GaTa sheet. The annealing process under applied pressure and the subsequent stripping thinning process are introduced in the transferring stage, thereby stably obtaining the large-area two-dimensional GaTe material. The size of the two-dimensional GaTe material is enhanced to 200-600 mu m from 5-60 mu m in the background art.

Description

technical field

[0001] The invention relates to a preparation method of a gallium telluride material, in particular to a preparation method of a two-dimensional gallium telluride material. Background technique

[0002] Two-dimensional functional materials represented by graphene and transition metal chalcogenides have attracted widespread attention due to their unique physical and chemical properties and their great research value. Among them, the two-dimensional GaTe material belongs to the III-VIIA group compound semiconductor, has a large atomic number and a suitable band gap, and has high application value in the fields of optoelectronic devices, radiation detection, and solar cells. The acquisition of large-area two-dimensional GaTe materials can meet the requirements of large-scale integrated circuits to continuously build multiple MOSFET structures in a small area, improve the performance of electronic devices and further reduce costs, which is the prerequisite for in...

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