Preparation method of two-dimensional gallium telluride material

A technology of gallium telluride and adhesive tape is applied in the field of preparation of two-dimensional gallium telluride materials, which can solve the problems such as the inability to meet the requirements of large-area two-dimensional materials.

Active Publication Date: 2015-04-22
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The above methods have prepared two-dimensional materials in the strict sense, but their sizes are all below 100 μm, which cannot meet the requirements of large-area two-dimensional materials.

Method used

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  • Preparation method of two-dimensional gallium telluride material
  • Preparation method of two-dimensional gallium telluride material
  • Preparation method of two-dimensional gallium telluride material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] In step 1, the vertical Bridgman crystal growth method is used to mix Ga:Te according to the material ratio of 1:1 to prepare a GaTe single crystal.

[0023] Step 2: In the Michelon Universal 2440-750 glove box under the Ar atmosphere, select a large GaTe bulk material with a smooth surface and no wrinkles, and separate it into two pieces along the natural cleavage plane.

[0024] Step 3: In the Michelon Universal 2440-750 glove box under the Ar atmosphere, use Scotch tape to tear off a GaTe sheet with a thickness of about 6 μm from the surface of the GaTe bulk material with a bright surface and less damage.

[0025] In the fourth step, in the Michelon Universal 2440-750 glove box under the Ar atmosphere, the Scotch tape with the GaTe flakes was bonded and separated 15 times until the surface of the tape was no longer bright, and a relatively dense 200nm thickness was successfully attached. GaTe flakes. In order to protect the flat surface of the GaTe bulk material, th...

Embodiment 2

[0030] In step 1, the vertical Bridgman crystal growth method is used to mix Ga:Te according to the material ratio of 1:1 to prepare a GaTe single crystal.

[0031] Step 2: In the Michelon Universal 2440-750 glove box under the Ar atmosphere, select a large GaTe bulk material with a smooth surface and no wrinkles, and separate it into three pieces along the natural cleavage plane.

[0032] Step 3: In the Michelon Universal 2440-750 glove box under the Ar atmosphere, use Scotch tape to tear off a GaTe sheet with a thickness of about 8 μm from the surface of the GaTe bulk material with a bright surface and less damage.

[0033] In the fourth step, in the Michelon Universal 2440-750 glove box under the Ar atmosphere, the Scotch tape with the GaTe flakes was bonded and separated 15 times until the surface of the tape was no longer bright, and a relatively dense 210nm thickness was successfully attached. GaTe flakes. In order to protect the flat surface of the GaTe bulk material, ...

Embodiment 3

[0042] In step 1, the vertical Bridgman crystal growth method is used to mix Ga:Te according to the material ratio of 1:1 to prepare a GaTe single crystal.

[0043] Step 2: In the Michelon Universal 2440-750 glove box under the Ar atmosphere, select a large piece of GaTe bulk material with a smooth surface and no wrinkles, and separate it into four pieces along the natural cleavage plane.

[0044] Step 3: In the Michelona Universal 2440-750 glove box under the Ar atmosphere, use Scotch tape to tear off a GaTe sheet with a thickness of about 7 μm from the surface of the GaTe bulk material with a bright surface and less damage.

[0045] In the fourth step, in the Michelon Universal 2440-750 glove box under the Ar atmosphere, the Scotch tape with the GaTe flakes was bonded and separated 15 times until the surface of the tape was no longer bright, and a relatively dense 210nm thickness was successfully attached. GaTe flakes. In order to protect the flat surface of the GaTe bulk m...

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Abstract

The invention discloses a preparation method of a two-dimensional gallium telluride material, which is used for solving the technical problem of small area of the gallium telluride material prepared by the existing preparation method. The technical scheme is based on the existing micromechanical stripping method, and temperature, pressure and other parameters are introduced in the transferring process to enhance the size of the two-dimensional GaTe material. On the basis of the original micromechanical stripping method comprising the steps of stripping and transferring, a three-step micromechanical stripping method comprising the steps of stripping, transferring and stripping is designed. In the transferring process, annealing treatment is performed at 90-110 DEG C under the applied pressure of 105Pa. Finally, a Scotch tape is utilized to perform stripping operation, thereby further thinning the GaTa sheet. The annealing process under applied pressure and the subsequent stripping thinning process are introduced in the transferring stage, thereby stably obtaining the large-area two-dimensional GaTe material. The size of the two-dimensional GaTe material is enhanced to 200-600 mu m from 5-60 mu m in the background art.

Description

technical field [0001] The invention relates to a preparation method of a gallium telluride material, in particular to a preparation method of a two-dimensional gallium telluride material. Background technique [0002] Two-dimensional functional materials represented by graphene and transition metal chalcogenides have attracted widespread attention due to their unique physical and chemical properties and their great research value. Among them, the two-dimensional GaTe material belongs to the III-VIIA group compound semiconductor, has a large atomic number and a suitable band gap, and has high application value in the fields of optoelectronic devices, radiation detection, and solar cells. The acquisition of large-area two-dimensional GaTe materials can meet the requirements of large-scale integrated circuits to continuously build multiple MOSFET structures in a small area, improve the performance of electronic devices and further reduce costs, which is the prerequisite for in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04
CPCC01B19/007C01P2002/85C01P2004/02C01P2004/60
Inventor 王涛赵清华何杰介万奇
Owner NORTHWESTERN POLYTECHNICAL UNIV
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