Manufacturing method of SrTiO3 single-crystal resistance switch device

A resistive switching device, single crystal technology, applied in the direction of electrical components, etc., can solve the problems of increasing the difficulty of sample preparation, achieve the effect of low equipment requirements, good performance, and avoid complexity
CN104538549AInactive Publication Date: 2015-04-22XIAMEN UNIV
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
XIAMEN UNIV
Publication Date
2015-04-22
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention relates to resistance switch devices, in particular to a manufacturing method of a SrTiO3 single-crystal resistance switch device. A non-doped SrTiO3 single crystal wafer is placed in a quartz glass tube after being washed, the air in the quartz glass tube is replaced by argon, and then the quartz glass tube is sealed; the obtained and packaged quartz glass tube comprising the SrTiO3 single crystal wafer is heated, taken out and cooled to the indoor temperature, and the SrTiO3 single crystal wafer on which high-temperature annealing is carried out can be obtained by knocking the quartz glass tube into pieces; the SrTiO3 single crystal wafer on which high-temperature annealing is carried out is plated with a gold electrode, after the SrTiO3 single crystal wafer is taken out, elargol is dripped on the other face of the SrTiO3 single crystal wafer, a silver electrode is formed, and the manufacturing of the SrTiO3 single-crystal resistance switch device is finished. The manufacturing method is simple and easy to operate, and the packaged SrTiO3 single crystal wafer can be directly heated in air. Filiform conduction and electrification appear on the surface of the annealed SrTiO3 single crystal wafer, and the switch performance of the SrTiO3 single crystal wafer can be achieved without the electroforming process.
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Description

technical field

[0001] The invention relates to a resistance switching device, in particular to a SrTiO after high temperature annealing 3 A method for fabricating a single crystal resistive switching device. Background technique

[0002] Resistive random access memory based on resistive switching phenomenon is expected to become one of the substitutes of next-generation memory devices, so it has important research value. The resistance switching behavior of oxides has been extensively studied due to their advantages in stability and environmental adaptability. At present, the oxides used in resistive switching devices mainly include TiO 2 , BaTiO 3 , SrTiO 3 , NiO, La 1-x Sr x MnO 3 Wait. Materials today, 2008, 11(6): 28-36 systematically studied the resistive switching properties of transition metal oxides, and pointed out that transition metal oxides exhibit reversible resistive switching properties under an applied voltage. SrTiO 3 It is an oxide of perovskite ...

Claims

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