Manufacturing method of SrTiO3 single-crystal resistance switch device

A resistive switching device, single crystal technology, applied in the direction of electrical components, etc., can solve the problems of increasing the difficulty of sample preparation, achieve the effect of low equipment requirements, good performance, and avoid complexity

Inactive Publication Date: 2015-04-22
XIAMEN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In summary, SrTiO 3 Single wafer has good resistive switching properties, but doping increases the difficulty of sample preparation. At present, the common way to generate oxygen vacancies is vacuum annealing, which requires equipment to maintain vacuum, and additional electroforming process is required.

Method used

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  • Manufacturing method of SrTiO3 single-crystal resistance switch device
  • Manufacturing method of SrTiO3 single-crystal resistance switch device
  • Manufacturing method of SrTiO3 single-crystal resistance switch device

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specific Embodiment

[0026] A high temperature annealed SrTiO 3 The specific steps of the preparation method of the single crystal resistance switching device are as follows:

[0027] 1) Use purchased intact undoped SrTiO 3 Single wafer 2, after cleaning, put it into a quartz glass tube with a diameter of 15mm and a length of 15-25cm, and then use a vacuum device to replace the air in the quartz glass tube with argon three times to ensure that the air in the quartz glass tube is exhausted go. After charging about 10 -4 Argon gas of Pa, this is mainly to ensure that the pressure difference inside and outside the quartz glass tube is roughly equal during heating, and will not explode due to too large a pressure difference. Finally, the oxyacetylene flame is used to fuse the quartz glass tube to play the role of sealing;

[0028] 2) the encapsulated SrTiO obtained in step 1) 3 The single wafer 2 quartz glass tubes are heated in a constant temperature well furnace, the temperature in the well fur...

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Abstract

The invention relates to resistance switch devices, in particular to a manufacturing method of a SrTiO3 single-crystal resistance switch device. A non-doped SrTiO3 single crystal wafer is placed in a quartz glass tube after being washed, the air in the quartz glass tube is replaced by argon, and then the quartz glass tube is sealed; the obtained and packaged quartz glass tube comprising the SrTiO3 single crystal wafer is heated, taken out and cooled to the indoor temperature, and the SrTiO3 single crystal wafer on which high-temperature annealing is carried out can be obtained by knocking the quartz glass tube into pieces; the SrTiO3 single crystal wafer on which high-temperature annealing is carried out is plated with a gold electrode, after the SrTiO3 single crystal wafer is taken out, elargol is dripped on the other face of the SrTiO3 single crystal wafer, a silver electrode is formed, and the manufacturing of the SrTiO3 single-crystal resistance switch device is finished. The manufacturing method is simple and easy to operate, and the packaged SrTiO3 single crystal wafer can be directly heated in air. Filiform conduction and electrification appear on the surface of the annealed SrTiO3 single crystal wafer, and the switch performance of the SrTiO3 single crystal wafer can be achieved without the electroforming process.

Description

technical field [0001] The invention relates to a resistance switching device, in particular to a SrTiO after high temperature annealing 3 A method for fabricating a single crystal resistive switching device. Background technique [0002] Resistive random access memory based on resistive switching phenomenon is expected to become one of the substitutes of next-generation memory devices, so it has important research value. The resistance switching behavior of oxides has been extensively studied due to their advantages in stability and environmental adaptability. At present, the oxides used in resistive switching devices mainly include TiO 2 , BaTiO 3 , SrTiO 3 , NiO, La 1-x Sr x MnO 3 Wait. Materials today, 2008, 11(6): 28-36 systematically studied the resistive switching properties of transition metal oxides, and pointed out that transition metal oxides exhibit reversible resistive switching properties under an applied voltage. SrTiO 3 It is an oxide of perovskite ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 廖霞霞王惠琼王吉政郑金成
Owner XIAMEN UNIV
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