A kind of plt film whose resistive switch performance can be regulated by mechanical load and its preparation method

A thin film and magnetic stirrer technology, applied in the direction of electrical components, etc., can solve the problem of unstable resistance switching characteristics, etc., and achieve good resistance switching performance, stable resistance switching process, and simple raw materials

Active Publication Date: 2018-07-03
SUN YAT SEN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Studies have shown that in Pb with similar chemical composition 1-x La x Ti 1-x / 4 o 3 ( x =0.05) The perovskite film has ferroelectricity, piezoelectricity and resistance switching characteristics, but its resistance switching characteristics are not very stable

Method used

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  • A kind of plt film whose resistive switch performance can be regulated by mechanical load and its preparation method
  • A kind of plt film whose resistive switch performance can be regulated by mechanical load and its preparation method
  • A kind of plt film whose resistive switch performance can be regulated by mechanical load and its preparation method

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Embodiment 1

[0026] 1) Place the substrate in a mixture of acetone, isopropanol, and deionized water (1:1:1 volume ratio of acetone: isopropanol: deionized water), ultrasonically clean for 5 minutes; Ultrasonic cleaning with deionized water for 1 minute; dry the substrate with high-purity nitrogen.

[0027] 2) Dissolve 5 mmol of lead acetate trihydrate in 10 ml of glacial acetic acid, and stir at a constant temperature of 110°C on a magnetic stirrer until the raw materials are dehydrated. After cooling, slowly add 5 mmol tetrabutyl titanate, and stir until the first solution is uniform.

[0028] 3) Dissolve 0.1mmol of lanthanum nitrate in 10ml of ethylene glycol methyl ether, and stir at a constant temperature of 60°C on a magnetic stirrer until the second solution is uniform and cooled.

[0029] 4) Slowly add the first solution into the second solution, fully stir and age for 24 hours to obtain the precursor.

[0030] 5) Inhale the precursor with a 2ml syringe, and install a 0.22μm filt...

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Abstract

The invention discloses a PLT film whose resistance switch performance can be regulated by mechanical load and a preparation method thereof. The structural formula of the PLT film is as follows: Pb1‑xLaxTi1‑x / 4O3, x=2%. The preparation method includes the following steps: (1) cleaning the Pt(200nm)\Ti(50nm)\SiO2(500nm)\Si substrate; (2) dissolving lead acetate trihydrate in glacial acetic acid, adding tetrabutyl titanate to obtain a solution 1. Dissolve lanthanum nitrate in ethylene glycol methyl ether, stir and cool to obtain solution 2; add solution 1 to solution 2 to obtain a precursor; (3) filter the precursor through a 0.22μm filter head and drop to 400r / min (4) Place the wet film sample in a tube furnace and pre-fire it to remove the organic solvent; (5) Repeat steps 3 and 4 to obtain a film; (6) Place a porous mask on the PLT film As a template, a Pt top electrode array with a thickness of 20 nm was prepared on the film using an electron beam evaporation system. The raw material of the invention is simple, the crystallinity of the PLT thin film is good, the surface is dense and flat, and the resistance switching performance is good.

Description

technical field [0001] The invention relates to the technical field of resistance switches, in particular to a PLT film whose resistance switch performance can be adjusted through mechanical loads and a preparation method thereof. Background technique [0002] With the development of information generation, the performance and integration of electronic products are constantly improving. Due to the complexity of product functions, it is necessary to continuously increase the storage density. Therefore, it is necessary to study memory devices with small size, low energy consumption, large capacity, fast speed and adjustable performance. In memory, resistive variable memory has the advantages of non-volatility, simple structure, low energy consumption, and fast erasing and writing speed, which has attracted extensive attention and research. The storage principle of RRAM is based on the resistive switching effect, that is, by applying a voltage, the resistance of the material ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/8836H10N70/011H10N70/021
Inventor 郑跃熊伟明王莹姜格蕾张惠艳陈云
Owner SUN YAT SEN UNIV
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