Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of plt film whose resistive switch performance can be regulated by mechanical load and its preparation method

A thin film and magnetic stirrer technology, applied in the direction of electrical components, etc., can solve the problem of unstable resistance switching characteristics, etc., and achieve good resistance switching performance, stable resistance switching process, and simple raw materials

Active Publication Date: 2018-07-03
SUN YAT SEN UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Studies have shown that in Pb with similar chemical composition 1-x La x Ti 1-x / 4 o 3 ( x =0.05) The perovskite film has ferroelectricity, piezoelectricity and resistance switching characteristics, but its resistance switching characteristics are not very stable

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of plt film whose resistive switch performance can be regulated by mechanical load and its preparation method
  • A kind of plt film whose resistive switch performance can be regulated by mechanical load and its preparation method
  • A kind of plt film whose resistive switch performance can be regulated by mechanical load and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] 1) Place the substrate in a mixture of acetone, isopropanol, and deionized water (1:1:1 volume ratio of acetone: isopropanol: deionized water), ultrasonically clean for 5 minutes; Ultrasonic cleaning with deionized water for 1 minute; dry the substrate with high-purity nitrogen.

[0027] 2) Dissolve 5 mmol of lead acetate trihydrate in 10 ml of glacial acetic acid, and stir at a constant temperature of 110°C on a magnetic stirrer until the raw materials are dehydrated. After cooling, slowly add 5 mmol tetrabutyl titanate, and stir until the first solution is uniform.

[0028] 3) Dissolve 0.1mmol of lanthanum nitrate in 10ml of ethylene glycol methyl ether, and stir at a constant temperature of 60°C on a magnetic stirrer until the second solution is uniform and cooled.

[0029] 4) Slowly add the first solution into the second solution, fully stir and age for 24 hours to obtain the precursor.

[0030] 5) Inhale the precursor with a 2ml syringe, and install a 0.22μm filt...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a PLT film whose resistance switch performance can be regulated by mechanical load and a preparation method thereof. The structural formula of the PLT film is as follows: Pb1‑xLaxTi1‑x / 4O3, x=2%. The preparation method includes the following steps: (1) cleaning the Pt(200nm)\Ti(50nm)\SiO2(500nm)\Si substrate; (2) dissolving lead acetate trihydrate in glacial acetic acid, adding tetrabutyl titanate to obtain a solution 1. Dissolve lanthanum nitrate in ethylene glycol methyl ether, stir and cool to obtain solution 2; add solution 1 to solution 2 to obtain a precursor; (3) filter the precursor through a 0.22μm filter head and drop to 400r / min (4) Place the wet film sample in a tube furnace and pre-fire it to remove the organic solvent; (5) Repeat steps 3 and 4 to obtain a film; (6) Place a porous mask on the PLT film As a template, a Pt top electrode array with a thickness of 20 nm was prepared on the film using an electron beam evaporation system. The raw material of the invention is simple, the crystallinity of the PLT thin film is good, the surface is dense and flat, and the resistance switching performance is good.

Description

technical field [0001] The invention relates to the technical field of resistance switches, in particular to a PLT film whose resistance switch performance can be adjusted through mechanical loads and a preparation method thereof. Background technique [0002] With the development of information generation, the performance and integration of electronic products are constantly improving. Due to the complexity of product functions, it is necessary to continuously increase the storage density. Therefore, it is necessary to study memory devices with small size, low energy consumption, large capacity, fast speed and adjustable performance. In memory, resistive variable memory has the advantages of non-volatility, simple structure, low energy consumption, and fast erasing and writing speed, which has attracted extensive attention and research. The storage principle of RRAM is based on the resistive switching effect, that is, by applying a voltage, the resistance of the material ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/8836H10N70/011H10N70/021
Inventor 郑跃熊伟明王莹姜格蕾张惠艳陈云
Owner SUN YAT SEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com