High beam quality of semiconductor laser array beam combination device
A technology of laser array and laser beam combining, which is applied in the field of laser technology and can solve the problems that the beam quality does not meet the requirements
Inactive Publication Date: 2015-05-06
BEIJING UNIV OF TECH
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Problems solved by technology
The beam quality after shaping is still not up to the requirements in many industries and research
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[0018] The semiconductor laser stack composed of a semiconductor laser bar coated with a high-transparency film of the corresponding wavelength on the output surface is placed on the semiconductor laser bar, the declination prisms Ln1 and Ln2 designed relative to the bar laser wavelength, the focusing lens L1, and the blazed grating In the external cavity composed of L2 and external cavity feedback output mirror L3. The laser beams T1, T2, and T3 emitted by the bar have a feedback effect on the laser light generated by the light-emitting point due to the feedback of the external cavity feedback output mirror L3, so that the laser wavelength and mode of the semiconductor light-emitting point are selected accordingly, so that The laser light of each luminous point of the semiconductor laser bar forms a conjugate with the blazed grating blazed laser light. At the same time, due to the action of the declination prisms Ln1 and Ln2, the lasers of different wavelengths have the same b...
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The invention provides a high beam quality of semiconductor laser array beam combination device and belongs to the laser technical field. A semiconductor laser stack is placed in an outer chamber, wherein the semiconductor laser stack is formed by a semiconductor laser bar, a corresponding wavelength of high-transparence film coats the output surface of the semiconductor laser stack, the outer chamber is formed by the semiconductor laser bar, a deflection angle prism, a focusing mirror, a blazed grating and an outer chamber feedback output mirror, and the deflection angle prism is designed relative to the laser wavelength of the bar. The feedback effect on lasers generated by light-emitting points can be achieved due to lasers fed back from the outer chamber feedback output mirror and accordingly the corresponding selection on the wavelengths and modes of the lasers of the semiconductor light-emitting points is achieved so as to enable every light-emitting point laser of the semiconductor laser bar and a blazed laser of the blazed grating to be conjugated. Meanwhile, the same glazed angle of the different wavelengths of lasers on the glazed grating is achieved under the action of the deflection angle prism and accordingly the lasers of every light-emitting point on the bar form one light-emitting point laser through beam combination and the lasers are arranged into a column in the direction of the fast axis of the semiconductor lasers to be combined into a laser beam through a wave length beam combination device.
Description
Technical field: [0001] The invention relates to a two-dimensional beam combination technology of semiconductor laser stacks, and belongs to the field of laser technology. Background technique [0002] Semiconductor lasers, especially high-power semiconductor lasers, are produced by semiconductor laser light-emitting points forming bars, or bars forming semiconductor laser stacks. The laser beam is formed by superimposing the laser light of each light-emitting point. The beam quality is poor due to the influence of the filling rate of the light-emitting point. Therefore, it is necessary to shape the beam to change its beam quality. At this stage, the shaping of semiconductor laser stacks mainly includes waveguide mirror refraction shaping, stepped mirror reflection shaping, etc., which mainly divide and rearrange the semiconductor laser, and sacrifice the beam quality in the fast axis direction of the semiconductor laser, thereby reducing the beam quality in the slow axis di...
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IPC IPC(8): H01S5/40H01S5/10G02B27/10
Inventor 曹银花许商瑞张雨桐邱运涛刘友强秦文斌尧舜王智勇
Owner BEIJING UNIV OF TECH