Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of vertically arrayed graphene thin films

A technology of graphene film and array, which is applied in the field of large-scale graphene film production, can solve the problem of less heat, and achieve the effect of solving the problem of excessively high hot spot temperature

Active Publication Date: 2015-05-13
上海瑞烯新材料科技有限公司
View PDF3 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Generally, graphene is used more as a heat sink and nanoparticle filler, but it is less heat transfer between different substrates when graphene films are arranged vertically

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of vertically arrayed graphene thin films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0025] Such as figure 1 As shown, the graphene film preparation process is as follows, a) the graphene oxide solution is prepared by the modified Hummer method, and vacuum dried; b) the graphene powder is re-infused into the deionized aqueous solution to form a neutral graphene oxide solution; c ) Prepare an A4 paper-sized glass substrate for spin-coating graphene oxide. When the graphene oxide reaches a certain thickness, the graphene oxide film is first dried at room temperature, and then placed in a 95-100° C. L-ascorbic acid solution to reduce the graphene oxide film to obtain a graphene film.

[0026] In order to obtain vertically aligned graphene films, a specific mold container needs to be designed to meet the requirements. The graphene film obtained above is first cut to an appropriate size, and then arranged in a vertical array in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method of vertically arrayed graphene thin films. The preparation method comprises the following steps: a), preparing an oxidized graphene solution; b), coating a substrate with the oxidized graphene solution; c), reducing oxidized graphene into a graphene thin film through a strong reducing agent; d), cutting the graphene thin film in a designed mold, and folding the cut graphene thin films into vertically arrayed graphene thin films; e), curing the vertically arrayed graphene thin films with a binding agent; f), polishing the surfaces of the cured graphene thin films to ensure that the polished graphene thin films are in better contact with the surface of a device, and finally filling the polished graphene thin films with a polymer adhesive to improve the interlayer contact between the graphene thin films. The vertically arrayed graphene thin films prepared according to the preparing method can be applied to the field of high-power electronic devices, such as being used as an interface heat dissipation material to provide a heat dissipation solution.

Description

technical field [0001] The invention relates to a method for producing large-scale graphene films, in particular to a method for preparing vertically arrayed graphene films. Background technique [0002] As the power density of microelectronic devices continues to increase and the feature size of devices shrinks, the thermal management of microelectronic devices is becoming more and more important. Therefore, how to quickly transfer the heat of microelectronic devices has become an important issue. Interface heat dissipation materials have an important application in the heat dissipation of microelectronic packaging. At present, commercial interface heat dissipation materials include thermal conductive silicone grease, phase change materials, thermal conductive adhesives, and some carbon-based materials, etc., but these materials have low thermal conductivity. Therefore, the development of new interfacial heat dissipation materials with high thermal conductivity, low cost a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C09K5/14
Inventor 刘建影黄时荣
Owner 上海瑞烯新材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com