Multi-level converter submodule as well as inverter circuit and MMC topology both manufactured from such submodule

A multi-level converter and sub-module technology, which is applied in the directions of irreversible DC power input conversion to AC power output, high-efficiency power electronic conversion, and AC power input conversion to DC power output, etc. The problem of large switching loss and high voltage can achieve the effect of reducing the output harmonic component, reducing the switching loss and increasing the switching frequency

Inactive Publication Date: 2015-05-13
JIAXING QINGYUAN ELECTRICAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 1. High voltage, high power, low switching frequency, usually lower than 10kHz
[0005] 2. Traditionally based on S i The switching los

Method used

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  • Multi-level converter submodule as well as inverter circuit and MMC topology both manufactured from such submodule
  • Multi-level converter submodule as well as inverter circuit and MMC topology both manufactured from such submodule
  • Multi-level converter submodule as well as inverter circuit and MMC topology both manufactured from such submodule

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0024] Example 1:

[0025] See image 3 The multi-level converter sub-module shown uses IGBT and S i C-MOSFET hybrid full bridge sub-module structure design, including left branch Z, right branch Y, capacitor C, left branch Z, right branch Y, and capacitor C in parallel, and left branch Z includes 2 IGBTs Components, the first IGBT component 1 and the second IGBT component 2, the right branch Y includes 2 S i C-MOSFET element, first S i C-MOSFET element 3 and second S i The C-MOSFET element 4, the first IGBT element 1, the second IGBT element 2, the first SiC-MOSFET element 3, and the second SiC-MOSFET element 4 are bridged in sequence, that is: the emitter of the first IGBT element 1 is connected to the second IGBT The collector of the element 2, the emitter of the second IGBT element 2 is connected to the source of the second SiC-MOSFET element 4, and the drain of the second SiC-MOSFET element 4 is connected to the source of the first SiC-MOSFET element 3. The drain of the SiC-...

Example Embodiment

[0028] Example 2:

[0029] See Figure 4 Shown: an inverter circuit made of multi-level converter sub-modules, using IGBT and S i C-MOSFET hybrid full-bridge sub-module structure design, including left branch Z, right branch Y, capacitor C, resistance R and reactor G, left branch Z, right branch Y, and capacitor C are connected in parallel. Branch Z includes 2 IGBT elements, the first IGBT element 1 and the second IGBT element 2, and the right branch Y includes 2 S i C-MOSFET element, first S i C-MOSFET element 3 and second S i The C-MOSFET element 4, the first IGBT element 1, the second IGBT element 2, the first SiC-MOSFET element 3, and the second SiC-MOSFET element 4 are bridged in sequence, that is: the emitter of the first IGBT element 1 is connected to the second IGBT The collector of the element 2, the emitter of the second IGBT element 2 is connected to the source of the second SiC-MOSFET element 4, and the drain of the second SiC-MOSFET element 4 is connected to the sourc...

Example Embodiment

[0031] Example 3:

[0032] Such as Figure 5 As shown, the MMC topology made by multi-level converter sub-modules is composed of six bridge arms 5. Each bridge arm 5 is composed of several interconnected multi-level converter sub-modules SM and a reactor L is formed in series, the upper and lower bridge arms form a phase unit, the six bridge arms have symmetry, and the electrical parameters of each sub-module and the reactance value of each bridge arm are the same. The structure of the sub-module SM of the multilevel converter is as follows image 3 As shown, the structure adopts a three-phase six-branch structure, each bridge arm 5 is formed by cascading a certain number of sub-modules, and a reactor L is configured to suppress the circulating current and the rising rate of fault current. By IGBT and S i The multi-level converter sub-module composed of C-MOSFET can be regarded as a small power converter. The increase of the switching frequency of each unit will inevitably enabl...

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Abstract

The invention relates to a multi-level converter submodule as well as an inverter circuit and an MMC topology both manufactured from such a submodule. The multi-level converter submodule comprises a left branch, a right branch and a capacitor; the left branch comprises 2 IGBT elements, namely a first IGBT element and a second IGBT element; the right branch comprises 2 SiC-MOSFET elements, namely a first SiC-MOSFET element and a second SiC-MOSFET element; the first first IGBT element, the second IGBT element, the first SiC-MOSFET element and the second SiC-MOSFET element are orderly bridged together; the anode of the capacitor is connected with a common point between the first IGBT element and the first SiC-MOSFET element, while the cathode of the capacitor is connected with a common point between the IGBT element and the second SiC-MOSFET element. The IGBT and SiC-MOSFET mixed full-bridge submodule is adopted to break through the restriction on the switching frequency caused by the Si material, and therefore, the switching frequency of the MMC-HVDC system is comprehensively improved.

Description

technical field [0001] The present invention relates to a sub-module of a multi-level converter and an inverter circuit made by it, and an MMC topology, in particular to a sub-module of a multi-level converter and a single-phase full-bridge inverter circuit made by it, and an MMC (Modular multilevel converter) topology, belonging to the field of power electronics. Background technique [0002] Modular multilevel converter (MMC) has independent control of active power and reactive power, many output voltage levels (low harmonic content), good output voltage waveform, low switching frequency, and high modularity , easy to expand, redundant control and other advantages, it is a research hotspot in domestic and foreign academic circles and industrial circles in recent years. MMC has been successfully applied in wind power grid-connected, long-distance large-capacity power transmission, etc. In the future, it will be used in renewable energy grid-connected, asynchronous intercon...

Claims

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Application Information

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IPC IPC(8): H02M7/5387H02M7/49
CPCH02M7/49H02M7/5387Y02B70/10H02M7/4835
Inventor 江斌开王志新
Owner JIAXING QINGYUAN ELECTRICAL TECH
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