CMOS MEMS capacitance-type humidity sensor and preparation method thereof

A humidity sensor and capacitive technology, which is applied in the field of CMOS MEMS capacitive humidity sensor and its preparation, and semiconductor chips, can solve the problems of easy cracking and difficult guarantee of mechanical strength, etc.

Active Publication Date: 2015-05-20
苏州工业园区纳米产业技术研究院有限公司
View PDF17 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In addition, when the sensitivity and response time of the device are guaranteed, the structural strength of the device is often ignored. A fast-response CMOS relative humidity sensor involved in Chinese patent CN 101620197 B has a humidity sensitive medium above and below In contact with air, the effect of fast response is achieved, and the sensitivity of the device is not lost. However, since the bulk silicon under the sensitive area is corroded, the sensitive area is suspended as a whole, and the mechanical strength is difficult to be guaranteed. It is easy to break in practical applications.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CMOS MEMS capacitance-type humidity sensor and preparation method thereof
  • CMOS MEMS capacitance-type humidity sensor and preparation method thereof
  • CMOS MEMS capacitance-type humidity sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0029] see Figure 1 to Figure 3 The CMOS MEMS capacitive humidity sensor described in a preferred embodiment of the present invention (hereinafter referred to as the humidity sensor) comprises a substrate 1 with a front side 11 and a back side 12, an oxide layer deposited on the front side 11 of the substrate 1 2. The first capacitive electrode 3 and the second capacitive electrode 4 arranged on the oxide layer 2, the humidity sensitive medium layer 5 filled between the oxide layer 2, the first capacitive electrode 3 and the second capacitive electrode 4 ( figure 1 (shown only in frame), several air sub-channels 61 extending from the back side 12 of the substrate 1 towar...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a CMOS MEMS capacitance-type humidity sensor and a preparation method thereof, and belongs to the technology of a semiconductor chip. A plurality of air subchannels are formed on a substrate in orthographic projection of a humidity sensing medium layer, the sensitivity of the sensor can be improved and the response time can be shortened by virtue of the air subchannels; moreover, a supporting column is formed between two adjacent air subchannels, so that the strength of a sensitive device area can be improved by virtue of the supporting column, the cracking of the humidity sensor in real application can be prevented, and under the situation that the sensitivity and the response time of the humidity sensor are guaranteed, the structural strength of the humidity sensor is improved; the CMOS MEMS capacitance-type humidity sensor formed by adopting the method is provided with the air subchannels and the supporting column, so that the structural strength of the capacitance-type humidity sensor can be improved under the situation that the sensitivity and the response time of the capacitance-type humidity sensor are guaranteed.

Description

technical field [0001] The invention relates to a CMOS MEMS capacitive humidity sensor and a preparation method thereof, belonging to semiconductor chip technology. Background technique [0002] Humidity sensors are widely used in many fields such as national defense aviation, meteorological detection, industrial control, agricultural production, medical equipment, etc. In recent years, an important direction for the development of humidity sensors is miniaturization. Existing miniature humidity sensors mainly include capacitive, resistive, piezoresistive and other types. Capacitive humidity sensors have been widely used in commercial fields due to their advantages of low power consumption and low cost. The use of standard CMOS technology to manufacture capacitive miniature humidity sensors has three advantages: (1) the sensor is small in size and has good consistency; (2) it is easy to monolithically integrate the humidity sensor and the detection circuit, which helps to i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/22
Inventor 赵成龙
Owner 苏州工业园区纳米产业技术研究院有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products