A kind of capacitive pressure sensor and preparation method thereof

A pressure sensor and capacitive technology, which is applied in fluid pressure measurement, instruments, and force measurement using capacitance changes, can solve the problems of poor mass production capacity and large capacitor volume, and achieve high Young's modulus, simplified circuits, Avoid the effects of influence

Active Publication Date: 2017-02-01
NO 24 RES INST OF CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this method can achieve large capacitance changes and reduce the requirements for peripheral detection circuits, the vibrating diaphragm can be made of stainless steel with high Young's modulus to improve fatigue resistance and further improve reliability. Poor production capacity

Method used

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  • A kind of capacitive pressure sensor and preparation method thereof
  • A kind of capacitive pressure sensor and preparation method thereof
  • A kind of capacitive pressure sensor and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0058] Such as figure 1 As shown, the capacitive pressure sensor of this embodiment includes a plate capacitance composed of a conductive monocrystalline silicon movable electrode plate 1 and a metal fixed electrode 2, and also includes a conductive monocrystalline silicon substrate 3 and a movable monocrystalline silicon substrate. The conductive support structure 4 between the electrode plate 1 and the conductive single crystal silicon base 3, the movable electrode plate 1 of the conductive single crystal silicon, the conductive single crystal silicon base 3 and the conductive support structure 4 form a closed chamber in the middle, and the metal The fixed electrode 2 is arranged on the conductive single crystal silicon substrate 3 inside the airtight chamber; the conductive single crystal silicon substrate 3 includes a plurality of conductive single crystal silicon blocks insulated from each other, each of the plurality of conductive single crystal silicon blocks All of the...

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Abstract

The invention discloses a capacitive pressure sensor. The capacitive pressure sensor comprises a plate capacitor, and further comprises a conductive monocrystal silicon substrate and a conductive supporting structure, wherein the plate capacitor comprises a conductive monocrystal silicon movable electrode plate and a metallic fixed electrode; the conductive supporting structure is arranged between the conductive monocrystal silicon movable electrode plate and the conductive monocrystal silicon substrate; a closed cavity is defined by the conductive monocrystal silicon movable electrode plate, the conductive monocrystal silicon substrate and the conductive supporting structure; the metallic fixed electrode is arranged on the conductive monocrystal silicon substrate inside the closed cavity; the conductive monocrystal silicon substrate comprises a plurality of conductive monocrystal silicon blocks which are insulated from each other; the conductive monocrystal silicon blocks are not simultaneously connected with the conductive monocrystal silicon movable electrode plate and the metallic fixed electrode, but at least one of the conductive monocrystal silicon blocks is connected with the conductive monocrystal silicon movable electrode plate and the metallic fixed electrode respectively. The capacitive pressure sensor disclosed by the invention is high in change value of capacitance, simplified in circuit, high in Young modulus of structure, accurate in measuring result, and not prone to be subjected to influence from the external environment.

Description

technical field [0001] The invention belongs to the field of pressure sensors, and relates to a capacitive pressure sensor and a preparation method thereof, in particular to a capacitive pressure sensor with large capacitance change. Background technique [0002] Pressure sensors are sensors that test pressure changes by detecting changes in parameters such as resistance, capacitance, current, and light due to pressure. Pressure sensors, like acceleration sensors, are sensors with a large quantity and wide range, and the annual demand has reached dozens. billion. [0003] There are many types of pressure sensors, mainly silicon piezoresistive pressure sensors, resonant pressure sensors, capacitive pressure sensors, etc. Silicon piezoresistive pressure sensors detect pressure by detecting changes in the resistance of silicon resistance with pressure. Because the silicon resistance of the sensor is a semiconductor resistance, the resistance value changes with temperature, and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/14G01L9/12
Inventor 张正元胡刚毅李勇建梅勇张志红李小刚
Owner NO 24 RES INST OF CETC
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