A substrate structure for the growth of III-V nitrides and its preparation method

Abstract

The invention provides a substrate structure for growth of nitrides of III-V families and a preparation method thereof. The preparation method comprises the steps of 1) defining a plurality of pattern units on a growth substrate, and forming V-grooves between the plurality of pattern units; 2) forming a buffer layer on the surface of each pattern unit; 3) forming an SiO2 layer on the surface of each buffer layer; 4) etching a plurality of SiO2 bulges which are arranged at interval in the middle area of each SiO2 layer, and reserving SiO2 peripheral layers in peripheral areas of the buffer layers. By firstly adopting the V-grooves to divide to form the plurality of pattern units, then preparing the buffer layers which contain hexagonal lattice structures and are used for growth of light-emitting epitaxial structures and preparing the parcel-shaped SiO2 bulges and the SiO2 peripheral layers through an etching process, the parcel-shaped SiO2 bulges not only can guarantee the crystal quality of the grown light-emitting epitaxial structures, but also can improve the light output efficiency, and the SiO2 peripheral layers can restrict the light-emitting epitaxial structures from vertically growing close to the V-grooves and improve the crystal quality of the light-emitting epitaxial structures.

Description

technical field [0001] The invention relates to the field of semiconductor lighting, in particular to a substrate structure for growing III-V group nitrides and a manufacturing method thereof. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes are made of III-V compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and ot...

AI Technical Summary

Problems solved by technology

However, for sapphire substrates with raised structures, direct deposition of GaN light-emitting epitaxial structures often brings huge crystal defects, which seriously affects the brightness of light-emitting diodes. H was performed on the surface of the sapphire substrate with the raised structure left and right 2 Reduction treatment, and then the reaction source is introduced, and a low-temperature GaN layer is deposited on the surface of the sapphire substrate by low-temperature chemical vapor deposition, and then the reaction source is stopped, and the temperature is raised to about 1050°C to make the layer of low-temperature GaN layer on the sapphire substrate. Reorganize on the platform on the bottom surface to form the nucleation site of the GaN-based light-emitting epitaxial structure, and finally start to deposit the GaN-based light-emitting epitaxial structure to complete the preparation of the subsequent light-emitting diodes

[0004] For the above light-emitting diode preparation method, multiple steps are required to form the nucleation site of the GaN-based light-emitting epitaxial structure. The raised structure also has great restrictions on the improvement of the light output rate of the LED

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