mems device and method of forming the same

Abstract

A MEMS device and its forming method, the MEMS device includes first and second electrode plates on the sensing film layer above the cavity, the first and second electrode plates are perpendicular to the direction of the substrate surface, the The first and second electrode plates are comb-shaped including a main body part and a plurality of comb-tooth parts on a plane parallel to the substrate surface. The comb-shaped first electrode plate and the second electrode plate are oppositely arranged, and the comb-shaped The comb teeth of the first electrode plate and the second electrode plate are arranged to cross each other, so that the area of ​​the plate capacitance formed by the first electrode plate and the second electrode plate is effectively increased, the sensitivity of the MEMS device is improved, and the energy saving is saved. area of ​​the MEMS device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a MEMS device and a forming method thereof. Background technique [0002] MEMS (Micro-Electro-Mechanical Systems, Micro-Electro-Mechanical Systems) pressure sensors are widely used in automotive electronics (such as engine oil pressure sensors, automotive brake system air pressure sensors, automotive engine intake manifold pressure sensors, diesel common rail pressure sensors); consumer electronics (such as tire pressure gauges, sphygmomanometers, cabinet scales, liquid level control pressure sensors for solar water heaters); industrial electronics (such as digital pressure gauges, industrial ingredient weighing, etc.). [0003] Current MEMS pressure sensors generally come in two types: piezoresistive pressure sensors and capacitive pressure sensors, both of which are micromechanical electronic sensors formed on silicon wafers. [0004] The piezoresistive pressure sensor ...

AI Technical Summary

Problems solved by technology

[0007] The first electrode plate 03 and the second electrode plate 05 of the existing MEMS capacitive pressure sensor are arranged parallel to the substrate 01. In order to improve the sensitivity of the capacitive pressure sensor, the current common practice is to increase the size of the first electrode Plate 03, the area of ​​the relative region of the second electrode plate 05, but while increasing the area of ​​the relative region of the first electrode plate 03, the second electrode plate 05, the area occupied by the MEMS capacitive pressure sensor is also correspondingly increased, urgently need a A MEMS capacitive pressure sensor improves sensitivity without increasing footprint

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