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Manufacturing method of low-temperature polycrystalline silicon thin-film transistor array substrate

A thin-film transistor and low-temperature polysilicon technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electric solid-state devices, etc., can solve problems such as disadvantages, complicated process steps, and cost reduction, so as to reduce production costs, improve production efficiency, and reduce costs. Effect of using quantity

Active Publication Date: 2015-06-10
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process steps of forming the LTPS TFT array substrate in the prior art are complicated, and it is not conducive to reducing the cost

Method used

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  • Manufacturing method of low-temperature polycrystalline silicon thin-film transistor array substrate
  • Manufacturing method of low-temperature polycrystalline silicon thin-film transistor array substrate
  • Manufacturing method of low-temperature polycrystalline silicon thin-film transistor array substrate

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Embodiment Construction

[0018] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, the embodiments are provided to explain the principles of the invention and its practical application, thereby enabling others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to particular intended uses. In the drawings, the same reference numerals will be used to denote the same elements throughout.

[0019] In the manufacturing method of the low temperature polycrystalline silicon (Lower Temperature Polycrystal Silicon, LTPS) thin film transistor (Thin Film Transistor, TFT) array substrate of the present invention, the LTPS TFT array substrate includes at least N channel region and P channel region, but the present invention ...

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Abstract

The invention discloses a manufacturing method of a low-temperature polycrystalline silicon thin-film transistor array substrate; the method comprises the step: (A) defining a heavily doped region (316a) and a lightly doped region (316b) of an N-channel source electrode, a heavily doped region (317a) and a lightly doped region (317b) of an N-channel drain electrode by means of a first striped photomask; (B) defining a doped region (318) of a P-channel source electrode and a doped region (319) of a P-channel drain electrode by means of a second striped photomask; (C) utilizing a third striped photomask to define a pixel region, a contact hole region at the heavily doped region (317a) of the N-channel source electrode and the heavily doped region (316a) of the source electrode and a contact hole region at the doped region (318) of the P-channel source electrode and the doped region (319) of the drain electrode; and (D), utilizing a fourth striped photomask to define a metal electrode region at the heavily doped region (317a) of the N-channel drain electrode and the heavily doped region (316a) of the source electrode, and a metal electrode region at the doped region (318) of the P-channel source electrode and the doped region (319) of the drain electrode.

Description

technical field [0001] The invention belongs to the technical field of liquid crystal display, and in particular relates to a method for manufacturing a low temperature polycrystalline silicon (Lower Temperature Polycrystalline Silicon, LTPS) thin film transistor (Thin Film Transistor, TFT) array substrate. Background technique [0002] With the evolution of optoelectronics and semiconductor technology, it has also led to the vigorous development of flat panel displays. Among many flat panel displays, liquid crystal displays (LCD for short) have high space utilization efficiency and low power consumption. , no radiation and low electromagnetic interference and many other superior features have become the mainstream of the market. [0003] At present, amorphous silicon thin-film transistors (a-Si TFT) are widely used as switching elements of LCDs, but a-Si TFT LCDs meet the requirements of thin, light weight, high precision, high brightness, high reliability, and low power co...

Claims

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Application Information

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IPC IPC(8): H01L21/77H01L27/12
CPCH01L27/1214H01L27/1259H01L27/1274H01L29/78621H01L27/1288H01L27/127H01L21/02592H01L21/02675H01L27/1218H01L27/1229H01L27/1251H01L29/66757H01L29/66765H01L29/78669H01L29/78675
Inventor 卢马才
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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