Manufacturing method of low-temperature polycrystalline silicon thin-film transistor array substrate

A thin-film transistor and low-temperature polysilicon technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electric solid-state devices, etc., can solve problems such as disadvantages, complicated process steps, and cost reduction, so as to reduce production costs, improve production efficiency, and reduce costs. Effect of using quantity

Active Publication Date: 2015-06-10
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process steps of forming the LTPS TFT array substrate in the pri

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of low-temperature polycrystalline silicon thin-film transistor array substrate
  • Manufacturing method of low-temperature polycrystalline silicon thin-film transistor array substrate
  • Manufacturing method of low-temperature polycrystalline silicon thin-film transistor array substrate

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0018] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention can be implemented in many different forms, and the present invention should not be construed as being limited to the specific embodiments set forth herein. On the contrary, these embodiments are provided to explain the principle of the present invention and its practical application, so that other skilled in the art can understand various embodiments of the present invention and various modifications suitable for specific anticipated applications. In the drawings, the same reference numerals will always be used to denote the same elements.

[0019] In the manufacturing method of the low temperature polycrystal silicon (LTPS) thin film transistor (TFT) array substrate of the present invention, the LTPS TFT array substrate includes at least an N-channel region and a P-channel region, but the present invention does not Limited to this....

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a manufacturing method of a low-temperature polycrystalline silicon thin-film transistor array substrate; the method comprises the step: (A) defining a heavily doped region (316a) and a lightly doped region (316b) of an N-channel source electrode, a heavily doped region (317a) and a lightly doped region (317b) of an N-channel drain electrode by means of a first striped photomask; (B) defining a doped region (318) of a P-channel source electrode and a doped region (319) of a P-channel drain electrode by means of a second striped photomask; (C) utilizing a third striped photomask to define a pixel region, a contact hole region at the heavily doped region (317a) of the N-channel source electrode and the heavily doped region (316a) of the source electrode and a contact hole region at the doped region (318) of the P-channel source electrode and the doped region (319) of the drain electrode; and (D), utilizing a fourth striped photomask to define a metal electrode region at the heavily doped region (317a) of the N-channel drain electrode and the heavily doped region (316a) of the source electrode, and a metal electrode region at the doped region (318) of the P-channel source electrode and the doped region (319) of the drain electrode.

Description

technical field [0001] The invention belongs to the technical field of liquid crystal display, and in particular relates to a method for manufacturing a low temperature polycrystalline silicon (Lower Temperature Polycrystalline Silicon, LTPS) thin film transistor (Thin Film Transistor, TFT) array substrate. Background technique [0002] With the evolution of optoelectronics and semiconductor technology, it has also led to the vigorous development of flat panel displays. Among many flat panel displays, liquid crystal displays (LCD for short) have high space utilization efficiency and low power consumption. , no radiation and low electromagnetic interference and many other superior features have become the mainstream of the market. [0003] At present, amorphous silicon thin-film transistors (a-Si TFT) are widely used as switching elements of LCDs, but a-Si TFT LCDs meet the requirements of thin, light weight, high precision, high brightness, high reliability, and low power co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/77H01L27/12
CPCH01L27/1214H01L27/1259H01L27/1274H01L29/78621H01L27/1288H01L27/127H01L21/02592H01L21/02675H01L27/1218H01L27/1229H01L27/1251H01L29/66757H01L29/66765H01L29/78669H01L29/78675
Inventor 卢马才
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap