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GaN thick membrane CMP composition and preparation method thereof

A composition and thick film technology, applied in polishing compositions containing abrasives, etc., can solve problems such as affecting the quality of epitaxy, and achieve the effects of simple process implementation, reduced width and low cost

Inactive Publication Date: 2015-07-01
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These corrosion pits will affect the quality of subsequent epitaxy

Method used

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  • GaN thick membrane CMP composition and preparation method thereof
  • GaN thick membrane CMP composition and preparation method thereof
  • GaN thick membrane CMP composition and preparation method thereof

Examples

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Embodiment Construction

[0034] The present invention will be further described below in conjunction with specific embodiments. The following examples are used to illustrate the present invention, but not to limit the present invention.

[0035] The experiments in the examples all use CETR CP4 as the polishing test machine, the polishing wafer is a 2-inch gallium nitride thick film, and the polishing removal rate (MRR) is measured by a precision electronic balance with an accuracy of 0.01mg. The change in the weight of the wafer before and after polishing is calculated. It is obtained that the polishing rate is the ratio of polishing removal weight converted to removal thickness to polishing time. After polishing the gallium nitride surface quality inspection, use Bruker's Dimension ICON atomic force microscope to observe the surface morphology and calculate the surface roughness (Ra), the probe radius is 10nm, the vertical resolution is 0.01nm, and the scanning frequency is 1.5Hz. The scanning range is...

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Abstract

The invention relates to a GaN thick membrane CMP composition and a preparation method thereof, belongs to the technical field of microelectronic auxiliary materials and ultraprecision machining processes, and particularly relates to a polishing composition containing a solid phase catalyst. The composition comprises deionized water, a solid phase catalyst, an oxidizing agent, polishing abrasive particles and a pH regulator. The pH value of the polishing composition is 1.0-4.3. The solid phase catalyst is used to promote the oxidizing action in the CMP process, so that the problem that corrosion process on a GaN gallium surface is hardly carried out is solved; a high quality gallium nitride polishing surface is obtained. According to the invention, equipment transformation is not needed, the cost is relatively low and the process is simple to implement.

Description

Technical field [0001] The invention belongs to the technical field of microelectronic auxiliary materials and ultra-precision processing technology, and particularly relates to a gallium nitride thick film chemical mechanical polishing composition and a preparation method thereof. Background technique [0002] The basic pattern of the domestic and foreign extended film market is that foreign-funded enterprises dominate in product technology, and local manufacturers are gradually rising. In order to further improve the LED industry chain, governments at all levels will continue to increase investment in basic research in the upstream field during the "Twelfth Five-Year Plan" period. Mid- and downstream companies are also actively expanding upstream. The development prospects of the domestic LED epitaxial wafer market are optimistic. [0003] Currently, LED substrate categories include sapphire, silicon carbide, silicon, and gallium nitride (GaN), which is known as the third-generat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 潘国顺邹春莉徐莉顾忠华龚桦史晓磊周艳
Owner TSINGHUA UNIV