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A kind of gan thick film CMP composition and preparation method thereof

A composition and thick film technology, applied in polishing compositions containing abrasives, etc., can solve problems such as affecting the quality of epitaxy, and achieve the effects of simple process implementation, low cost and high quality

Inactive Publication Date: 2017-06-06
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These corrosion pits will affect the quality of subsequent epitaxy

Method used

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  • A kind of gan thick film CMP composition and preparation method thereof
  • A kind of gan thick film CMP composition and preparation method thereof
  • A kind of gan thick film CMP composition and preparation method thereof

Examples

Experimental program
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Embodiment Construction

[0034] The present invention will be further elaborated below in conjunction with specific examples. The following examples are used to illustrate the present invention, but are not intended to limit the present invention.

[0035] In the experiments in the examples, CETR CP4 was used as the polishing test machine, and the polishing sheet was a 2-inch gallium nitride thick film. The polishing removal rate (MRR) was calculated by measuring the weight change of the wafer before and after polishing with a precision electronic balance with an accuracy of 0.01 mg. It is obtained that the polishing rate is the ratio of the polishing removal weight converted to the removal thickness to the polishing time. After polishing, the gallium nitride surface quality is inspected. The Dimension ICON atomic force microscope of Bruker Company is used to observe the surface topography and calculate the surface roughness (Ra). The probe radius is 10nm, the vertical resolution is 0.01nm, and the sc...

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Abstract

The invention relates to a GaN thick membrane CMP composition and a preparation method thereof, belongs to the technical field of microelectronic auxiliary materials and ultraprecision machining processes, and particularly relates to a polishing composition containing a solid phase catalyst. The composition comprises deionized water, a solid phase catalyst, an oxidizing agent, polishing abrasive particles and a pH regulator. The pH value of the polishing composition is 1.0-4.3. The solid phase catalyst is used to promote the oxidizing action in the CMP process, so that the problem that corrosion process on a GaN gallium surface is hardly carried out is solved; a high quality gallium nitride polishing surface is obtained. According to the invention, equipment transformation is not needed, the cost is relatively low and the process is simple to implement.

Description

technical field [0001] The invention belongs to the technical field of microelectronic auxiliary materials and ultra-precision processing technology, and particularly relates to a gallium nitride thick film chemical mechanical polishing composition and a preparation method thereof. Background technique [0002] The basic structure of the wafer market at home and abroad is that foreign-funded enterprises dominate the product technology, and local manufacturers are gradually rising. In order to further improve the LED industry chain, governments at all levels will continue to increase investment in basic research in the upstream field during the "Twelfth Five-Year Plan" period. Midstream and downstream enterprises are also actively expanding upstream. The domestic LED epitaxial wafer market has an optimistic prospect. [0003] Currently, LED substrate categories include sapphire, silicon carbide, silicon, and gallium nitride (GaN), known as the third-generation semiconductor m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 潘国顺邹春莉徐莉顾忠华龚桦史晓磊周艳
Owner TSINGHUA UNIV