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Method for making the first metal interconnection layer

A technology of metal interconnection layer and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as tungsten damage, and achieve the effect of reducing resistance

Active Publication Date: 2018-07-03
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of this application is to provide a method for making the first metal interconnection layer, so as to solve the problem that tungsten is damaged when making the first metal interconnection layer in the prior art

Method used

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  • Method for making the first metal interconnection layer
  • Method for making the first metal interconnection layer
  • Method for making the first metal interconnection layer

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Embodiment Construction

[0035] It should be pointed out that the following detailed description is exemplary and intended to provide further explanation to the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0036] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, it indicates There are features, steps, operations, means, components and / or combinations thereof.

[0037] For the convenience of description, spatially relative terms may be used here...

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Abstract

The invention provides a manufacture method for a first metal interconnection layer. The manufacture method includes the steps of: providing a semiconductor substrate; sequentially forming an etching stopping layer, an intermetallic dielectric layer, an ethyl orthosilicate oxide layer and a metal layer; etching the metal layer, the ethyl orthosilicate oxide layer, the intermetallic dielectric layer and the etching stopping layer to form a through hole; forming a sacrificial layer in the through hole; etching to remove the metal layer; stripping the sacrificial layer. The sacrificial layer is formed in the through hole, for preventing tungsten being corroded and damaged by etching liquid during the process of etching the metal layer, and thereby the defect that the tungsten is damaged in the prior art is overcome, and resistance between the first metal interconnection layer and a semiconductor device layer is reduced; after the metal layer is removed, the sacrificial layer is stripped, thus being free of additionally damaging the formed device structure.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to a method for manufacturing a first metal interconnection layer. Background technique [0002] In the manufacturing process of semiconductor devices, firstly carry out the semiconductor front-end process to make various functional devices, and then make devices such as metal interconnection layers. Taking the metal oxide semiconductor field effect transistor (MOSFET) device as an example, after completing the MOSFET After the main structure of the device is fabricated, tungsten contacts and tungsten plugs should be made on the MOSFET device to electrically connect each part of the MOSFET device to complete the device layer process of the MOSFET device. [0003] After the device layer where the MOSFET device is located is fabricated, a metal interconnection layer is also fabricated on the device layer. In the manufacturing process of the metal in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/76877H01L21/76882
Inventor 刘焕新
Owner SEMICON MFG INT (SHANGHAI) CORP
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