Wafer edge defect detection method

Abstract

The invention discloses a wafer edge defect detection method. When a wafer edge defect detection program is created, signals of a whole detection region of the wafer edge are acquired firstly, the scanning area of the acquired whole detection region is simulated and expanded into a rectangular plane, the width of a detection light source serves as a scanning interval criterion so that the rectangular plane can be divided according to the equal area, according to different requirements of defect detection, different scanning interval numbers are selected for conducting scanning detection on wafer edge defects, according to the flexibility requirements of different defects, wafer edge scanning methods conducted at different speeds are flexibly selected, rapid scanning operation is achieved, and detection flexibility is considered as well.

Description

technical field [0001] The invention relates to the technical field of detection of semiconductor integrated circuits, and more particularly relates to a method capable of rapidly detecting wafer edge defects. Background technique [0002] When the critical dimension of the device enters below 45 nanometers, the traditional dry lithography technology cannot meet the production process requirements due to the limit of resolution, and the immersion lithography process will become larger due to its superior technical performance and good cost performance scale into production. [0003] see figure 1 , figure 1 is a schematic diagram of the cross-sectional structure of the wafer edge. like figure 1 As shown, the topography of the edge of the wafer 1 includes three regions, namely the upper bevel 2 , the top surface 3 and the lower bevel 4 . Since the edge area is not precisely controlled by the process in the production process of the integrated circuit, some extra thin film...

AI Technical Summary

Problems solved by technology

Moreover, since the wafer edge is often in contact with the manipulators of different process equipment, chips may be generated due to collisions

Due to the direct contact between the wafer and the liquid water during the immersion lithography exposure process, the defects existing on the edge of the wafer may be transported to the front of the wafer through the liquid water, resulting in the formation of various pattern-related defects in the subsequent exposure process , resulting in a large loss of chip yield

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