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GaN nanowire and preparation method thereof

A technology of nanowires and thin films, applied in the field of GaN nanowires and its preparation, nanowire microelectronics and optoelectronic devices, can solve the problems of difficult control of the radius, height and growth position of GaN nanowires, and achieve low cost and operability strong effect

Active Publication Date: 2015-07-08
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to overcome the problem that the radius, height and growth position of GaN nanowires are difficult to control, the present invention first proposes a method for preparing GaN nanowires

Method used

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  • GaN nanowire and preparation method thereof
  • GaN nanowire and preparation method thereof
  • GaN nanowire and preparation method thereof

Examples

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Embodiment 1

[0039] A GaN nanowire with a diameter of less than 200 nm and a height of about 5 μm is prepared on a Si substrate. The material structure of this embodiment is from bottom to top, Si substrate, AlN group III nitride film, SiO 2 Patterned masking film, GaN nanowires. That is, in this embodiment, the substrate 1 is an Si substrate, the group III nitride film 2 is an AlN group III nitride film, and the patterned masking film 3 is SiO 2 Graphical masking film.

[0040] The preparation method sequentially includes the following steps:

[0041] Step 1: Put the Si substrate into the MOCVD reaction chamber, and epitaxially grow an AlN group III nitride film with a thickness of 300 nm on the Si substrate;

[0042] Step 2: By PECVD, deposit SiO with a thickness of 100 nm on the AlN group III nitride film (the AlN film grown on the Si substrate is an epitaxial wafer) 2 Dielectric layer, and use conventional photolithography and wet etching methods to remove SiO 2 The dielectric layer is prepar...

Embodiment 2

[0046] A GaN nanowire with a diameter of about 500 nm and a height of about 4 μm is prepared on a Si substrate. The material structure of this embodiment is from bottom to top, Si substrate, AlN / GaN group III nitride film, SiO 2 Patterned masking film, GaN nanowires. That is, in this embodiment, the substrate 1 uses a Si substrate, the group III nitride film 2 uses an AlN / GaN group III nitride film, and the patterned masking film 3 uses SiO 2 Graphical masking film.

[0047] The preparation method sequentially includes the following steps:

[0048] Step 1: Put the Si substrate into the MOCVD reaction chamber, and then epitaxially grow an AlN epitaxial layer with a thickness of 100 nm and a GaN epitaxial layer with a thickness of 800 nm on the Si substrate;

[0049] Step 2: Deposit 100 nm SiO on the AlN / GaN group III nitride film (the AlN / GaN film grown on the Si substrate is an epitaxial wafer) by PECVD 2 Dielectric layer, and use conventional photolithography and wet etching methods...

Embodiment 3

[0053] A GaN nanowire array with a diameter of less than 200 nm and a height of about 5 μm was prepared on a Si substrate. This embodiment uses a material structure that is basically the same as that of Embodiment 1. The material structure from bottom to top is Si substrate, AlN group III nitride film, SiO 2 Patterned masking film, GaN nanowires. That is, in this embodiment, the substrate 1 is an Si substrate, the group III nitride film 2 is an AlN group III nitride film, and the patterned masking film 3 is SiO 2 Graphical masking film.

[0054] The specific preparation process is basically the same as that in Example 1. When the patterned masking film 3 is prepared in step 2, the pattern of the masking film is prepared into circular holes arranged periodically, the diameter of the circular holes is 3 μm, and the period is 10 μm. Therefore, the GaN hexagonal pyramid microstructure arranged in an array can be epitaxially grown in the subsequent MOCVD selective area growth process,...

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Abstract

The invention discloses a GaN nanowire and a preparation method thereof. The preparation method of the GaN nanowire comprises the steps of forming a III-nitride film on a substrate in a epitaxial growth mode through MOCVD, preparing a graphical masking film on an epitaxial wafer, growing a GaN hexagonal pyramid microstructure on the graphical epitaxial wafer based on an MOCD selective area growing method, then etching the side face {1-101} of the GaN hexagonal pyramid microstructure off through an alkaline solution etching method, finally preparing the GaN nanowire, wherein the side face of the GaN nanowire is a {1-100} face, and the top face of the GaN nanowire is a {1-101} face. The GaN nanowire and the preparation method of the GaN nanowire have the advantages that the process is simple, and the diameter, height and position of the nanowire are controllable. In addition, the GaN nanowire can be used for manufacturing a GaN nanodevice with high performance.

Description

Technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a GaN nanowire and a preparation method thereof, which can be used in nanowire microelectronic and optoelectronic devices. Background technique [0002] Due to the properties of nanomaterials such as force, heat, electricity, light and magnetism, which are quite different from traditional bulk materials, their research has rich scientific content and important scientific value, so it is considered to be one of the three major science and technology in the 21st century. One. Among them, semiconductor nanowires are considered to be the basic structure of future micro-nano devices due to their unique one-dimensional quantum structure. In recent years, the research work of semiconductor nanowires has made great progress, and its application areas include integrated circuits, transistors, lasers, light-emitting diodes, single photon devices, and solar cells. Among the many...

Claims

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Application Information

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IPC IPC(8): H01L33/04H01L33/32H01L33/00
CPCH01L33/0066H01L33/0075H01L33/16H01L33/32
Inventor 张佰君陈伟杰林佳利
Owner SUN YAT SEN UNIV
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