Wafer packaging structure, chip packaging structure and packaging method thereof

Abstract

The invention discloses a wafer packaging structure, a chip packaging structure and a packaging method thereof. The wafer packaging structure comprises a large substrate with a plurality of substrate units; the large substrate comprises a first surface and an opposite second surface, the middle of the first surface of each substrate unit is provided with at least one first groove, at least one exhausting groove is formed in the middle of the substrate unit surrounding the first groove and is communicated with the first groove communicated with the adjacent surrounding substrate units, and at least one exhaust groove is formed in the substrate unit of the edge surrounding the first groove and extends to the edge of the substrate to communicate with the outside. Thus, the first groove of the large substrate can be communicated with a cavity, the air pressure of the cavity and first groove can be balanced, a static film is prevented from plumping during evacuation, and the film electrostatic adsorption capacity in the dry etching process is guaranteed; the chip packaging structure is obtained by cutting and segmenting the wafer packaging structure.

Description

technical field [0001] The invention relates to the technical field of wafer level packaging, in particular to a wafer packaging structure, a chip packaging structure and a packaging method thereof. Background technique [0002] In the wafer packaging structure, the substrate is used as a carrier or support for other chips, and usually has an opposite first surface and a second surface. In some wafer packaging processes, it is usually necessary to perform dry etching on the second surface of the substrate to form openings. Or carry out dry etching to the non-functional surface of the wafer bonded to the second surface of the substrate to form openings, and when performing dry etching to form openings, it is necessary to first adsorb the first surface of the substrate by means of electrostatic adsorption and other methods. Positioning is performed, and then an etching process is performed in a vacuum environment. When electrostatic adsorption is implemented, an electrostatic...

AI Technical Summary

Problems solved by technology

When electrostatic adsorption is implemented, an electrostatic film will be pasted on the first surface of the substrate, but for a substrate with a groove formed on the first surface of the substrate, the electrostatic film will cover the groove to form a closed space with air, so that , in the vacuuming step before etching, the electrostatic film at the groove location will bulge due to the difference in air pressure between the groove and the chamber, resulting in poor electrostatic adsorption capacity, and even flying pieces, which seriously affect the etching process

Images