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Method of removing carbon protection film on surface of silicon carbide device

A device surface and protective film technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of ineffective removal of carbon protective film, device performance impact, SiC wafer surface damage, etc., to increase graphite The effect of spacing, speeding up the reaction speed, and increasing the contact area

Inactive Publication Date: 2015-07-29
ZHUZHOU CSR TIMES ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the commonly used methods for removing the carbon protective film either cannot effectively remove the carbon protective film containing impurities, or inevitably cause damage to the surface of the SiC wafer, which will seriously affect the performance of the device.

Method used

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  • Method of removing carbon protection film on surface of silicon carbide device
  • Method of removing carbon protection film on surface of silicon carbide device
  • Method of removing carbon protection film on surface of silicon carbide device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The SiC wafer used in this example was purchased from CREE Company in the United States, N-type, with a thickness of (350±25) μm, and a resistivity of (0.012-0.025) Ω cm; Complete, epitaxial thickness 6μm, thickness uniformity ≤ 5%, doping concentration 1E16cm -3 , Doping concentration uniformity ≤ 5%.

[0038] (1) Loading of carbon protective film on the surface of SiC wafer:

[0039] On the surface of the SiC wafer, use BN310 negative glue produced by Beijing Chemical Reagent Research Institute, spin-coat at 4000rpm for 60 seconds, coat the glue three times, vertical the film at 80°C for 10 minutes, and then carbonize it in a high-temperature furnace at 800°C for 1 hour to obtain a thickness of 100nm carbon protective film.

[0040] (2) wet oxidation and ultrasonic treatment:

[0041] ① Acid tank (the material of the inner tank is quartz, the size is 205×205×255mm 3 ), inject a mixed solution of concentrated sulfuric acid and hydrogen peroxide with a volume ratio ...

Embodiment 2

[0055] The SiC wafer used in this example was purchased from CREE Company in the United States, N-type, with a thickness of (350±25) μm, and a resistivity of (0.012-0.025) Ω cm; Complete, epitaxial thickness 6μm, thickness uniformity ≤ 5%, doping concentration 1E16cm -3 , Doping concentration uniformity ≤ 5%.

[0056] (1) Loading of carbon protective film on the surface of SiC wafer:

[0057] On the surface of the SiC wafer, use BN310 negative glue produced by Beijing Chemical Reagent Research Institute, spin-coat at 4000rpm for 60 seconds, coat the glue three times, vertical the film at 80°C for 10 minutes, and then carbonize it in a high-temperature furnace at 800°C for 1 hour to obtain a thickness of 100nm carbon protective film.

[0058] (2) wet oxidation and ultrasonic treatment:

[0059] ① Acid tank (the material of the inner tank is quartz, the size is 205×205×255mm 3 ), inject a mixed solution of concentrated sulfuric acid and hydrogen peroxide with a volume ratio ...

Embodiment 3

[0073] The SiC wafer used in this example was purchased from CREE Company in the United States, N-type, with a thickness of (350±25) μm, and a resistivity of (0.012-0.025) Ω cm; Complete, epitaxial thickness 6μm, thickness uniformity ≤ 5%, doping concentration 1E16cm -3 , Doping concentration uniformity ≤ 5%.

[0074] (1) Loading of carbon protective film on the surface of SiC wafer:

[0075] On the surface of the SiC wafer, BN310 negative glue produced by Beijing Chemical Reagent Research Institute was used, spin-coated at 4000rpm for 60 seconds, glued three times, and the film was erected at 80°C for 10 minutes. Then carbonize in a high-temperature furnace at 800° C. for 1 hour to obtain a carbon protective film with a thickness of 100 nm.

[0076] (2) wet oxidation and ultrasonic treatment:

[0077] ① Acid tank (the material of the inner tank is quartz, the size is 205×205×255mm 3 ), inject a mixed solution of concentrated sulfuric acid and hydrogen peroxide with a volu...

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Abstract

The invention discloses a method of removing a carbon protection film on a surface of a silicon carbide device. The method provided by the invention comprises the following steps: 1) a SiC wafer whose surface is loaded with the carbon protection film is immersed in a liquid phase carbon remover for ultrasonic processing; and 2) the SiC wafer after ultrasonic processing is placed in a postprocessing agent for postprocessing. According to the method of the invention, through cooperation of steps such as wet oxidation, ultrasonic processing and postprocessing, the carbon protection film on the surface of the silicon carbide can be effectively removed, remaining impurities on the carbon protection film can be well removed, damages to the SiC surface during the carbon protection film removing process can be avoided, and a subsequent processing process is facilitated.

Description

technical field [0001] The invention relates to a treatment method for a silicon carbide device, in particular to a method for removing a carbon protective film on the surface of a silicon carbide device. Background technique [0002] In recent years, the superior performance of SiC devices has attracted more and more attention. However, due to some properties of the SiC material itself, some processes that have been maturely used in the manufacture of silicon devices are not suitable for the manufacture of SiC devices. Due to the low impurity diffusion coefficient of SiC materials, ion implantation is the best method for selective doping of SiC devices. However, the impurity ions implanted into the SiC material are basically located in the interstitial position of the lattice. In order to replace these impurity ions to the positions of the lattice points, technicians need to perform high-temperature activation annealing on the SiC material after ion implantation. The anne...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/04H01L21/02
CPCH01L21/02052H01L21/02057H01L21/02096H01L21/0445
Inventor 史晶晶李诚瞻吴煜东周正东赵艳黎高云斌吴佳杨勇雄丁荣军
Owner ZHUZHOU CSR TIMES ELECTRIC CO LTD