MEMS inertial sensor and making method of same

Abstract

The invention discloses an MEMS inertial sensor and a making method of the same. The MEMS inertial sensor includes a substrate, and two cover bodies which are respectively fixed on an upper end and a lower end of the substrate. A first accommodating chamber and a second accommodating chamber are respectively formed by the two cover bodies and the substrate at the two sides of the substrate. At the upper end of the substrate, a first sensitive structure is arranged in the first accommodating chamber through a middle combining layer. At the lower end of the substrate, a second sensitive structure is arranged in the second accommodating chamber through a middle combining layer. According to the MEMS inertial sensor, the substrate is arranged at the middle of a chip and sensitive structures are bonded to the upper surface and the lower surface respectively of the substrate, so that the MEMS inertial sensor has a double-layer sensitive structure, thereby increasing the utilization ratio of chip area, improving the total performance of the MEMS inertial sensor, increasing the sensitivity by one times and increasing signal-noise ratio; in other words, the MEMS inertial sensor, compared with a conventional MEMS inertial sensor, on the basis of not reducing the performance of the chip, is further reduced in size, thereby satisfying small-size development of electronic products.

Description

technical field [0001] The present invention relates to an inertial measurement device, more specifically, to an inertial measurement device manufactured based on MEMS, such as a MEMS accelerometer, a gyroscope, an oscillator, etc.; the present invention also relates to a method for manufacturing a MEMS inertial sensor. Background technique [0002] At present, with the development of consumer electronics and wearable devices, higher and higher requirements are put forward for the performance of MEMS inertial sensors. Many system manufacturers hope that MEMS inertial devices can further reduce the chip size on the basis of maintaining the existing performance. In the current MEMS inertial device, the sensitive structure layer is anchored on the substrate by bonding, and the MEMS sealing cover is bonded on the upper surface of the sensitive structure layer to form a sealed cavity isolated from the outside world. The current problem is that the development of MEMS technology i...

AI Technical Summary

Problems solved by technology

The current problem is that the development of the MEMS process is relatively mature, and the process capability is close to the limit. It is difficult to further reduce the size of the chip according to the requirements of the system manufacturer, and there is little room for the chip performance to continue to improve.

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