Manufacturing method of inversion structure of III semiconductor light-emitting device

Abstract

The application discloses a manufacturing method of an inversion structure of a III semiconductor light-emitting device. The manufacturing method comprises the following steps: growing a substrate, a buffer layer, an n type nitride semiconductor layer, an active layer, and a p type nitride semiconductor layer successively from bottom to top to form an epitaxial structure; depositing a transparent conductive layer; carrying out yellow-light etching process and definition to form an isolation slot; depositing a first insulation layer structure; depositing a P type contact metal unit and an N type contact metal unit simultaneously; depositing a second insulation layer structure; depositing an inverted P type electrode and an inverted N type electrode and removing a photoresistor by using a stripping process so as to obtain a wafer; and carrying out reduction, scribing, splitting, testing ,and sorting on the wafer. According to the invention, the linear convex table surface technology is used for replacing the multi-hole vias technology in the prior art. The first insulation layer structure is a Bragg reflection layer-metal level-multilayer oxide insulating layer unit and serves as a reflector structure and an insulation layer, and thus an inverted reflector structure design and a first insulation layer are replaced and a metal protection layer is also removed.

Description

technical field [0001] The present application relates to the technical field of semiconductor lighting, in particular, to a method for fabricating a flip-chip structure of a Group III semiconductor light-emitting device. Background technique [0002] Traditional light-emitting diodes adopt a front-mount structure. Generally, the transparent conductive layer is made of high-transmittance materials, such as ITO, AZO, etc., and the electrodes are generally made of Cr / Pt / Au, etc. However, in the flip-chip structure, the light excited by the active layer It is directly emitted from the substrate on the other side of the electrode, so the requirement for the P-type electrode is changed to a highly reflective material covering the entire p-type nitride semiconductor layer as a mirror structure. The first is on the p-type nitride semiconductor layer Plating a transparent electrode with high transmittance plus high reflective metal, such as ITO / Ag, etc., the other is to directly coa...

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Problems solved by technology

[0002] Traditional light-emitting diodes adopt a front-mount structure. Generally, the transparent conductive layer is made of high-transmittance materials, such as ITO, AZO, etc., and the electrodes are generally made of Cr/Pt/Au, etc. However, in the flip-chip structure, the light excited by the active layer It is directly emitted from the substrate on the other side of the electrode, so the requirement for the P-type electrode is changed to a highly reflective material covering the entire p-type nitride semiconductor layer as a mirror structure. The first is on the p-type nitride semiconductor layer Plating a transparent electrode with high transmittance plus high reflective metal, such as ITO/Ag, etc., the other is to directly coat a high reflective metal on the p-type nitride semiconductor layer as an ohmic contact layer and a mirror, For example, Ag, Al, etc., no matter wh

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