Array-type gamma irradiation dosimeter of FBAR structure on diaphragm

A radiation dose and array technology, applied in the field of array gamma radiation dosimeters, can solve the problems that temperature has a great influence on the FBAR resonant frequency, cannot detect the distribution of radiation dose, and does not have a temperature compensation layer, etc., and achieves improvement. The effect of temperature stability, easy wiring, and high mechanical strength

Inactive Publication Date: 2015-08-12
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
View PDF8 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages of this scheme are: 1. FBAR does not have a temperature compensation layer, and the temperature has a great influence on the resonance frequency of FBAR; 2. Since there is only a single detection element, it is impossible to detect the distribution of radiation dose
The main disadvantage of this solution is that it requires a large inductor for wireless communication, thus limiting the miniaturization potential of this device
The disadvantage of this scheme is that effective post-processing is required to accurately determine the absorbed dose of radiation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Array-type gamma irradiation dosimeter of FBAR structure on diaphragm
  • Array-type gamma irradiation dosimeter of FBAR structure on diaphragm
  • Array-type gamma irradiation dosimeter of FBAR structure on diaphragm

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] The present invention is described in detail below in conjunction with accompanying drawing:

[0049] An array gamma radiation dosimeter with FBAR structure on the diaphragm, including a detection element 1, a composite film 6 and a Si base 8, the detection element 1 is on the composite film 6, the composite film 6 is used to support the detection element 1, and the Si base 8 Located under the composite film 6; the detection element 1 includes a number of FBARs distributed on the composite film 6 in a rectangular array, and the FBAR includes a bottom electrode 12, a piezoelectric layer 13 and a top electrode 15 from bottom to top, and a radiation sensitive layer 14 Set between the piezoelectric layer 13 and the bottom electrode 12 or between the piezoelectric layer 13 and the top electrode 15, the bottom electrode 12 is close to the upper surface of the composite film 6; the Si base 8 is provided with a number of cavities 9, the hollow The cavity 9 corresponds to the po...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an array-type gamma irradiation dosimeter of a FBAR structure on a diaphragm. The array-type gamma irradiation dosimeter comprises a detection element, a composite thin film, and a Si substrate. The detection element is disposed on the upper part of the composite thin film, and the composite thin film is used to support the detection element, and the Si substrate is disposed on the lower part of the composite thin film. The detection element comprises a plurality of FBAR, which are in an array-type arrangement, and are disposed on the composite thin film. Each of the FBAR comprises, from bottom to top, a bottom electrode, a piezoelectric layer, and a top electrode sequentially. An irradiation sensitive layer is disposed between each of the piezoelectric layers and each of the bottom electrodes, or is disposed between each of the piezoelectric layers and each of the top electrodes, and the bottom electrodes are tightly attached to the upper surface of the composite thin film. The Si substrate is provided with a plurality cavities, which are respectively corresponding to the irradiation sensitive layers in a vertical direction. The cavities are used to form the volume acoustic wave reflection interfaces, and the composite thin film areas corresponding to the cavities are the composite thin film suspension areas. The array-type gamma irradiation dosimeter has advantages of small size, high sensitivity, good temperature stability, good manufacturability, and ability of detecting irradiation dose distribution.

Description

technical field [0001] The invention belongs to the field of microelectromechanical system devices, in particular to an array type gamma radiation dosimeter of FBAR (film bulk acoustic-wave resonators) on a diaphragm, the array type gamma radiation dosimeter has a small size , high sensitivity, detectable radiation dose distribution, good temperature stability and good manufacturability. technical background [0002] Ionizing radiation sensing has a large number of applications. In large-scale high-energy physics experiments, high-dose radiation testing is an important means of understanding the degradation of silicon-based electronic devices. In nuclear material detection and security applications, where radiation sources may be partially obscured, low-dose sensors are required. In astronomy, the flux and direction of high-energy radiation needs to be measured. In radiotherapy for the treatment of cancer, it is necessary to determine the precise location and magnitude of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01T1/02
Inventor 高杨蔡洵何婉婧李君儒黄振华尹汐漾赵俊武赵坤丽
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products