A device and method for growing nitride crystals

Abstract

The invention discloses a nitride crystal growing device and method. The nitride crystal growing device comprises a reaction kettle and a crucible disposed in the reaction kettle. A heater is disposed on the periphery of the reaction kettle. A partition is disposed in the crucible. The partition separates the internal space of the crucible into a growing area and a pre-growing area which are independent of each other. Seed crystals are placed at the bottom of the growing area. Communication holes are formed in the lower portion of the partition. The growing area is communicated with the pre-growing area through the communication holes. The included angle between the partition and the bottom surface of the crucible is larger than 0 degree and not larger than 90 degrees. The nitride crystal growing device has the advantages solution flowing interchanging of the growing area and the pre-growing area is achieved by inclining the reaction kettle, the N concentration of the growing solution of the seed crystal area is high, and nitride crystals constantly grow in the high-N-concentration solution in a high-quality and high-speed manner.

Description

technical field [0001] The invention relates to a semiconductor crystal material growth device and method, in particular to a nitride crystal growth device and method. Background technique [0002] In recent years, studies on manufacturing semiconductor devices such as blue LEDs or white LEDs and semiconductor lasers using nitride semiconductor materials such as gallium nitride (GaN) and using the semiconductor devices in various electronic devices have been actively carried out. As one of the growth methods of GaN single crystal materials, the Na flux method (Na flux method), with its moderate growth conditions (700-1000°C, 5MPa), low dislocation density (~10 4 cm -2 ) and larger crystal size (4 inch), become the preferred technology for preparing high-quality GaN single crystal materials. The quality and rate of crystal growth in the sodium flow method are directly related to the N concentration of the Ga-Na solution near the seed crystal. Chinese patent CN 1922345A pr...

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Problems solved by technology

However, this invention has the defect that the high N concentration solution cannot flow directionally to the vicinity of the seed crystal; and the crystal growth solution and the seed crystal move too violently with the reactor when shaking, which is not conducive to the dynamic balance of crystal growth

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