Method of forming semiconductor device

Abstract

Provided is a semiconductor device forming method which comprises: providing a semiconductor substrate; forming a first low-K dielectric layer on the semiconductor substrate; forming a second low-K dielectric layer on the first low-K dielectric layer; and performing ultraviolet irradiation on the second low-K dielectric layer. The forming method may improve the quality and the reliability of a semiconductor device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] With the development of semiconductor technology, integrated circuits are developing in the direction of high integration. The requirement of high integration makes the line width of the semiconductor structure smaller and smaller, and the reduction of the line width puts forward higher requirements for the formation process of the integrated circuit. [0003] In a semiconductor structure, a semiconductor device is usually formed by a multilayer metal layer and a multilayer interlayer dielectric layer, etc., and the multilayer metal layer is electrically connected by a plug disposed in the interlayer dielectric layer. As the line width decreases, low-K dielectric layers have been widely used as interlayer dielectric layers. [0004] In the prior art, after forming the low-K dielectric layer, a ...

AI Technical Summary

Problems solved by technology

This overhang phenomenon leads to the formation of plugs, the interlayer dielectric layer near the plugs is prone to voids, resulting in a decline in the quality and reliability of semiconductor devices.

[0010] Therefore, a new method of forming a semiconductor device is needed to prevent the overhanging phenomenon of the plug during the formation of the semiconductor device, thereby preventing holes in the interlayer dielectric layer near the plug, thereby preventing the quality and reliability of the semiconductor device from declining

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