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An igbt drive protection circuit, a drive chip using the circuit and a protection circuit of the chip

A technology for driving protection circuits and driving chips, which is applied in the direction of electrical components, electronic switches, pulse technology, etc., can solve the problems of drive cable drive resistance resonance, power system stability, IGBT misconduction, etc., to avoid misconduction, Simple structure and stable effect

Active Publication Date: 2017-11-24
MORNSUN GUANGZHOU SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reason for this phenomenon is that the parasitic capacitance and stray inductance of the driving cable and the resonance of the driving resistance
If the gate voltage generated by resonance reaches the turn-on voltage of the IGBT, the IGBT will be mis-conducted, which will affect the stability of the power system

Method used

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  • An igbt drive protection circuit, a drive chip using the circuit and a protection circuit of the chip
  • An igbt drive protection circuit, a drive chip using the circuit and a protection circuit of the chip
  • An igbt drive protection circuit, a drive chip using the circuit and a protection circuit of the chip

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Embodiment Construction

[0028] The circuit of the present invention will be further described in detail below in conjunction with the drawings and specific embodiments.

[0029] The invention provides an IGBT driving protection circuit, which suppresses the resonance of the parasitic capacitance, stray inductance and driving resistance of the driving cable, avoids false conduction of the IGBT after it is turned off, protects the IGBT device, and maintains the stability of the power supply system.

[0030] figure 2 The principle diagram of the IGBT drive protection circuit of the present invention includes the VSS pin of the driver chip 1, the VG_L pin of the driver chip 1, the internal power supply VCC of the driver chip 1, and also includes the driver module 21, the first pull-down transistor Qa, the first Detection resistor Ra, first Zener tube Z1, first comparator 22, first Schmitt trigger 23, first inverter 24, first D flip-flop 25, first AND gate 26 and first NOR door 27.

[0031] The gate of...

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Abstract

The present invention provides an IGBT drive protection circuit. When the IGBT is turned off and the gate voltage is lower than the set reference voltage, the first pull-down transistor Q1 is turned on, and the voltage of the pin VG_L of the drive chip is pulled down to the drive The VSS pin level of the chip can effectively turn off the IGBT. At the same time, the invention also provides a driver chip using the circuit and a protection circuit for the chip. The invention has the advantages of simple structure, stability and reliability, etc. The resonance generated by parasitic capacitance, stray inductance and driving resistance prevents the IGBT from being mis-conducted after it is turned off, protects the IGBT device, and maintains the stability of the power system.

Description

technical field [0001] The invention relates to an IGBT drive circuit, in particular to a protection circuit driven by the IGBT. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a composite device composed of a power transistor and a power field effect transistor. Because of its high input impedance, fast working speed, and high withstand voltage, it is widely used in power electronic devices. , AC speed control system occupies a dominant position, such as frequency converter, wind power, UPS, etc., mostly use IGBT as the main power switching device. [0003] In the use of IGBT, the protection of IGBT is the most critical. On the one hand, because the IGBT device itself is relatively expensive, on the other hand, because IGBT damage will bring serious impact and damage. In the application of IGBT devices, it is found that after the IGBT is turned off (the gate drive current Ig is reduced to 0), the gate voltage Vg begins to oscillate ( figure 1 ). ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/567
Inventor 肖华曾正球周耀彬
Owner MORNSUN GUANGZHOU SCI & TECH