Temperature control disc

Abstract

The invention provides a temperature control disc. The temperature control disc is mainly used for solving the technical problem of thin film failure due to relatively low heat exchange efficiency and yield of the existing semiconductor coating equipment and not-uniform wafer temperature. The temperature control disc mainly comprises three parts, namely an upper heating disc body, a lower heating disc body and a heating disc base. The parts are connected by virtue of welding. The temperatures of the heating disc and the wafer are controlled by use of a medium and a heat conducting gas; each part has a different structure, so that medium channels and heat conducting gas channels of the heating disc can be formed, and furthermore, the temperature of the heating disc can be controlled; the temperature control disc is cooled and heated by use of a medium; and due to the circulation of the medium, the temperature of the heating disc is controlled; the medium channels are distributed inside the heating disc. The temperature control disc is reasonable in structure; the heat conducting gas inlet structure of the temperature control disc is capable of fully charging the heat conducting gas between the heating disc and the wafer quickly and evenly so that the temperature of the heating disc can be transferred to the wafer quickly and evenly or the temperature of the wafer can be quickly transferred to the heating disc for dissipation. The temperature control disc can be widely applied to the technical field of semiconductor thin-film deposition.

Description

technical field [0001] The invention relates to a temperature-controllable heating plate structure of semiconductor coating equipment, which includes a heating plate medium channel and a heat-conducting gas channel to realize rapid, accurate and uniform control of the wafer temperature. The invention belongs to the technical field of semiconductor thin film deposition application and manufacture. Background technique [0002] Semiconductor equipment often needs to heat the wafer and the chamber or maintain the temperature required for the deposition reaction during the deposition reaction, so the heating plate must have a heating structure to meet the purpose of preheating the wafer. Most of the semiconductor thin film deposition equipment will also have plasma to participate in the deposition reaction during the deposition process. Due to the release of plasma energy and the energy release of the reaction between chemical gases, the temperature of the heating plate and wafe...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the above problems, and mainly solve the technical problems of low heat exchange efficiency and production capacity of the existing semiconductor coating equipment, and insufficient uniformity of the wafer temperature, resulting in the failure of the film

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