Temperature control disc

A technology of warm plate and plate body, applied in the field of semiconductor thin film deposition application and manufacturing, can solve the problems of uneven wafer temperature, low heat exchange efficiency and productivity, and film failure.

Active Publication Date: 2015-09-16
PIOTECH CO LTD
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the above problems, and mainly solve the technical problems of low heat exchange efficiency and pro

Method used

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Experimental program
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Embodiment

[0016] Such as Figure 1-4 As shown, the temperature control plate mainly includes three parts, namely: the upper plate body 1 of the heating plate, the lower plate body 3 of the heating plate and the base 4 of the heating plate.

[0017] The lower surface of the upper plate body 1 of the heating plate has a medium channel hole 7 (the layout of the medium channel is as follows: figure 2 Shown); the lower surface of the upper plate body 1 of the heating plate is also provided with a heat conduction gas hole 6 and a thermocouple hole 12 distributed in the shape of rice; the lower surface of the upper plate body 1 of the heating plate is formed with a ceramic column hole 8 .

[0018] The lower plate body 3 of the heating plate is provided with a heat conduction gas distribution channel 14 for distributing the conduction gas. The cross-sectional view is shown in Figure 4 shown. There are heat conduction gas outlet holes 9 on the disk surface corresponding to the heat conducti...

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Abstract

The invention provides a temperature control disc. The temperature control disc is mainly used for solving the technical problem of thin film failure due to relatively low heat exchange efficiency and yield of the existing semiconductor coating equipment and not-uniform wafer temperature. The temperature control disc mainly comprises three parts, namely an upper heating disc body, a lower heating disc body and a heating disc base. The parts are connected by virtue of welding. The temperatures of the heating disc and the wafer are controlled by use of a medium and a heat conducting gas; each part has a different structure, so that medium channels and heat conducting gas channels of the heating disc can be formed, and furthermore, the temperature of the heating disc can be controlled; the temperature control disc is cooled and heated by use of a medium; and due to the circulation of the medium, the temperature of the heating disc is controlled; the medium channels are distributed inside the heating disc. The temperature control disc is reasonable in structure; the heat conducting gas inlet structure of the temperature control disc is capable of fully charging the heat conducting gas between the heating disc and the wafer quickly and evenly so that the temperature of the heating disc can be transferred to the wafer quickly and evenly or the temperature of the wafer can be quickly transferred to the heating disc for dissipation. The temperature control disc can be widely applied to the technical field of semiconductor thin-film deposition.

Description

technical field [0001] The invention relates to a temperature-controllable heating plate structure of semiconductor coating equipment, which includes a heating plate medium channel and a heat-conducting gas channel to realize rapid, accurate and uniform control of the wafer temperature. The invention belongs to the technical field of semiconductor thin film deposition application and manufacture. Background technique [0002] Semiconductor equipment often needs to heat the wafer and the chamber or maintain the temperature required for the deposition reaction during the deposition reaction, so the heating plate must have a heating structure to meet the purpose of preheating the wafer. Most of the semiconductor thin film deposition equipment will also have plasma to participate in the deposition reaction during the deposition process. Due to the release of plasma energy and the energy release of the reaction between chemical gases, the temperature of the heating plate and wafe...

Claims

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Application Information

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IPC IPC(8): C23C14/22C23C14/54C23C16/46C23C16/52H01L21/673
Inventor 吕光泉吴凤丽国建花郑英杰
Owner PIOTECH CO LTD
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