Subthreshold SRAM memory cell

Abstract

The invention provides a subthreshold SRAM memory cell, which comprises a basic circuit, a unit data playback circuit, a pre-tube circuit and an improved Schmidt phase inverter. According to the invention, an output terminal (QB) of the basic circuit is connected to an input terminal of the unit data playback circuit, an output terminal of the unit data playback circuit is connected to output of the pre-tube circuit, and the input terminal of the improved Schmidt phase inverter is connected; wherein, the pre-tube circuit comprises a third NMOS pipe (MN3), a source terminal of the pipe is connected to ground, a grid terminal is connected to a pre-control signal PREDIS, and a leakage terminal is connected to a read bit line RBL. The SRAM unit employs a pre-placed read mode to reduce power consumption; due to loss of NMOS transmitted high level threshold, dynamic power consumption is greatly reduced, static state power consumption is reduced at certain degree, the swing of the read data can be identified even not reach full swing, and SRAM performance can be obviously increased.

Description

technical field [0001] The invention relates to the field of memory, in particular to a near-subthreshold 8-tube SRAM unit with a new readout method. Background technique [0002] With the rise of the Internet of Things, medical electronics, RFID and other application fields, a large number of wireless sensor nodes are widely used. Typical characteristics of this type of node are large number of requirements, small system size, low performance requirements, and extremely high power consumption requirements. In such nodes, the memory occupies a large proportion of power consumption, so reducing the power consumption of the memory is of great help to reduce the power consumption of the whole machine. As a commonly used memory, SRAM has been extensively studied. To minimize power consumption, near-subthreshold designs have flourished. [0003] The power consumption of each operation of any tube is: [0004] P transistor = ...

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Problems solved by technology

where due to dynamic power dissipation versus V DD In the quadratic relationship, it accounts for the main proportion of th

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