Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Texture etching solution composition and texture etching method for crystalline silicon wafer

A technology of crystallinity and etching solution, which is applied in the direction of photovoltaic power generation, etc., can solve the problems of increased texture quality deviation, uneconomical productivity and cost, and reduced uniformity, so as to minimize quality deviation, maximize absorption, and improve The effect of uniformity

Active Publication Date: 2018-05-04
DONGWOO FINE CHEM CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these etching solutions contain isopropyl alcohol with a low boiling point, which must be added in the texturing process, so it is uneconomical in terms of productivity and cost. Due to the additional addition of isopropyl alcohol, a temperature gradient of the etching solution is generated, and the silicon wafer Variations in texture quality at different locations on the surface become larger and uniformity can be reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Texture etching solution composition and texture etching method for crystalline silicon wafer
  • Texture etching solution composition and texture etching method for crystalline silicon wafer
  • Texture etching solution composition and texture etching method for crystalline silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

manufacture example

[0070] The reactant (B) was produced under the components and conditions described in Table 1 below. Production Examples 9 and 10 show the compound (b-1) itself which did not react.

[0071] 【Table 1】

[0072]

[0073]

[0074] Examples and Comparative Examples

[0075] Add the balance of water (H 2 O), the texture etchant composition of manufacturing crystalline silicon chip.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a texture etching liquid composition and a texture etching method for a crystalline silicon wafer. The present invention provides a reaction product containing an alkali compound and a compound with a specific solubility index and an alkali metal (salt), to control the difference in etching speed with respect to the silicon crystal direction when a fine pyramid structure is formed on the surface of a crystalline silicon wafer, and to prevent alkali Compound-induced over-etching, thereby minimizing the quality deviation of textures at different positions and increasing light efficiency. A texture etching liquid composition and a texture etching method for a crystalline silicon wafer.

Description

technical field [0001] The present invention relates to a texture etching liquid composition and a texture etching method (TEXTURE ETCHINGSOLUTION COMPOSITION AND TEXTURE ETCHING METHOD OF CRYSTALLINE SILICONWAFERS). Background technique [0002] In recent years, a solar cell, which has spread rapidly, is an electronic device that directly converts solar energy, which is clean energy, into electricity as a next-generation energy source. A solar cell is composed of a PN junction semiconductor substrate in which an N-type silicon semiconductor layer is formed by diffusing phosphorus on the surface of a P-type silicon semiconductor to which boron is added. [0003] When light such as sunlight is irradiated to the substrate with an electric field formed by the PN junction, the electrons (-) and holes (+) in the semiconductor are excited, and they are in a state of moving freely inside the semiconductor. In the electric field generated by the junction, electrons (-) become N-ty...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23F1/40
CPCY02E10/50
Inventor 林大成洪亨杓李承洙
Owner DONGWOO FINE CHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products