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Texture etchant composition for crystalline silicon wafer and texture etching method

An etchant and crystallization technology, which is applied in the field of texture etchant composition and texture etching of crystalline silicon wafers, can solve the problems of reduced uniformity, uneconomical productivity and cost, and large deviation of texture quality, so as to achieve quality deviation Minimizes, prevents overetching, and maximizes the effect of absorption

Active Publication Date: 2016-10-26
DONGWOO FINE CHEM CO LTD
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Problems solved by technology

However, since these etching solutions contain isopropanol with a low boiling point, it must be additionally charged in the texturing process, which is uneconomical in terms of productivity and cost, and a temperature gradient of the etching solution containing additionally charged isopropyl alcohol occurs. The texture quality deviation at different positions on the surface of the silicon wafer becomes larger, and the uniformity may decrease

Method used

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  • Texture etchant composition for crystalline silicon wafer and texture etching method
  • Texture etchant composition for crystalline silicon wafer and texture etching method
  • Texture etchant composition for crystalline silicon wafer and texture etching method

Examples

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experiment example

[0091] A single crystal silicon wafer (156mm×156mm) was immersed in the alkali etching liquid composition of the crystalline silicon wafer of the Example and the comparative example.

[0092] At this time, the texturing conditions of Examples 1-19 and Comparative Examples 1-3 are the same as in Table 4 below, and the texturing conditions of Examples 20-30 and Comparative Examples 4-6 are temperature 80° C. and time 20 minutes.

[0093] In the case of Examples 20-30 and Comparative Examples 4-6, 20 silicon wafers were used for each etching process in a bath with a capacity of 18 L, and continuous etching was performed until the characteristic changes in appearance, etching amount, and reflectance occurred. time.

[0094] The texturing effects of the etching solution compositions for the crystalline silicon wafers produced in the above Examples and Comparative Examples were evaluated by the following method, and the results are shown in Tables 4 and 5 below.

[0095] 1. Etching...

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Abstract

The present invention relates to a texture etchant composition for a crystalline silicon wafer and a texture etching method and, more specifically, to a texture etchant composition for a crystalline silicon wafer and an etching method, wherein the composition contains an alkali compound and a polyethylene glycol-based compound with a particular structure, and thus controls the difference in the etching rate with respect to the silicon crystal direction in the formation of a micro-pyramid structure on the surface of the crystalline silicon wafer, thereby preventing over-etching by the alkali compound, and minimizing the deviation in the quality of the texture for each location, leading to an increase in light efficiency.

Description

technical field [0001] The present invention relates to a texture etchant composition and texture etching method for a crystalline silicon wafer that minimizes variation in texture quality at different positions on the surface of a crystalline silicon wafer and does not generate a temperature gradient during etching. Background technique [0002] A solar cell, which has been rapidly spreading recently, is an electronic device that directly converts solar energy, which is clean energy, into electricity as a next-generation energy source. A solar cell is constituted as a PN junction semiconductor substrate in which an N-type silicon semiconductor layer is formed by diffusing phosphorus on the surface of a P-type silicon semiconductor to which boron is added. [0003] If light such as sunlight is irradiated on the substrate with an electric field formed by the PN junction, the electrons (-) and holes (+) in the semiconductor are excited, and they become a state of moving freely...

Claims

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Application Information

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IPC IPC(8): C09K13/00C09K13/02
CPCC09K13/02
Inventor 林大成洪亨杓朴勉奎崔亨燮
Owner DONGWOO FINE CHEM CO LTD
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