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MEMS pressure sensor and manufacturing method

A technology of a pressure sensor and a manufacturing method, which is applied in fluid pressure measurement using capacitance change, piezoelectric/electrostrictive/magnetostrictive devices, instruments, etc., can solve the problems of MEMS pressure sensor influence, poor sensitivity, etc. Sensing efficiency and sensitivity, the effect of improving sensitivity

Active Publication Date: 2015-09-30
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a MEMS pressure sensor and its manufacturing method, which is used to solve the limitation of the thermal budget in the prior art, and continue to make it on the wafer after the IC control circuit is completed. The MEMS pressure sensor will affect the MEMS pressure sensor, resulting in poor sensitivity

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  • MEMS pressure sensor and manufacturing method

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Embodiment Construction

[0057] The implementation of the present invention will be illustrated by specific specific examples below, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

[0058] In the prior art, after the IC control circuit is completed, the MEMS pressure sensor is continued to be produced on the wafer. This MEMS pressure sensor is usually fabricated vertically on the CMOS device in the IC control circuit. Its structure is as follows figure 1 As shown, the upper and lower poles of the capacitor are composed of a deformable upper plate 1' and a fixed lower plate 2', a cavity 3' is formed between the upper plate 1' and the lower plate 2', and the lower The pole plate 2' is fixed in the oxide layer 4', and the oxide layer 4' is vertically integrated with the CMOS device 6' on the wafer 5'. This vertically integrated MEMS pressure sensor has a smaller volume and a higher reliability.

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Abstract

The invention provides an MEMS pressure sensor and a manufacturing method. The MEMS pressure sensor is formed on a substrate structure, and at least comprises an oxide layer, a lower pole plate, an upper pole plate and a suppressing pile, wherein the lower pole plate is positioned in the oxide layer, the upper pole plate is positioned on the upper surface of the oxide layer, a cavity is formed between the upper pole plate and the oxide layer and positioned above the lower pole plate, and the suppressing pile is positioned in the cavity and connected with the upper pole plate and the oxide layer. The suppressing pile suppresses arching of the upper pole plate to the distance between the highest arching place of the upper pole plate and the lower pole plate. A suppressing pile is added between the upper and lower pole plates to shorten the distance between the highest arching place of the upper pole plate and the lower pole plate. The induction efficiency and sensitivity of the MEMS pressure sensor are improved.

Description

technical field [0001] The invention relates to a pressure sensor, in particular to a MEMS pressure sensor and a manufacturing method thereof. Background technique [0002] MEMS (Micro-electromechanical Systems, micro-electromechanical systems) pressure sensors have been widely used in automotive electronics, industrial control, environmental monitoring, biomedicine and other fields. MEMS pressure sensors are mainly divided into two types: piezoresistive and capacitive. Conventional capacitive MEMS pressure sensors are mostly composed of a deformable upper plate and a fixed lower plate to form the upper and lower poles of the capacitor. When the upper plate is deformed under pressure, the distance between the upper and lower plates changes resulting in changes in capacitance value. Therefore, the physical characteristics of the deformable upper plate will play a very important role in the performance of the whole sensor. [0003] Changes in physical quantities of MEMS pre...

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Application Information

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IPC IPC(8): G01L1/14G01L9/12B81C1/00B81B7/02
Inventor 郑超许继辉于佳
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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