Process for manufacturing polycrystalline silicon chips
A polysilicon wafer and manufacturing process technology, applied in the direction of manufacturing tools, fine working devices, working accessories, etc., can solve the problems that affect the production rate and yield, steel wires are easy to jump, and hard point line marks are produced. , to achieve the effect of reducing production cost and improving yield
Inactive Publication Date: 2015-10-14
YANGGUANG GUIFENG ELECTRONICS SCI & TECH CO LTD
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Problems solved by technology
[0003] Usually there are hard point impurities SiC or SiN in the polysilicon ingot, and their Mohs hardness is 9.0-9.5, which is much higher than the Mohs hardness of 7.0 of silicon. Fluctuation occurs, the direction of the cutting force acting on the silicon wafer changes, and the steel wire is easy to jump and produce hard point line marks and a large number of debris, which affects the yield and yield of the wafer and increases the production cost
Method used
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Embodiment 1- Embodiment 5
[0039] A kind of manufacturing process of polycrystalline silicon wafer, the step method of the manufacturing process is the same as the above-mentioned embodiment, wherein the preparation parameters of the mortar and the final yield as table 1 shown.
[0040] Table 1
[0041]
[0042]
[0043] The invention is applicable to the technical field of multi-wire cutting polycrystalline silicon wafers, effectively reduces the rate of wire breakage and the proportion of bad hard-point line marks caused by polycrystalline ingots in the multi-wire cutting process, and increases the number of polycrystalline silicon wafers and the number of polycrystalline silicon wafers. The yield rate reduces the production cost.
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Abstract
The invention discloses a process for manufacturing polycrystalline silicon chips. The process for manufacturing the polycrystalline silicon chips includes the process steps of mortar preparation, silicon chip cutting, silicon chip degumming, silicon chip cleaning and drying, detection storage entry and the like. The process is suitable for the technical field of multi-line cutting of the polycrystalline silicon chips. The proportion of hard dot line mark chips is reduced, the chip output number and the yield of the polycrystalline silicon chips are increased, and production cost is reduced.
Description
technical field [0001] The invention relates to a processing technology of photovoltaic cell polysilicon, in particular to a manufacturing technology of a silicon wafer. Background technique [0002] With the development of photovoltaic industry, distributed photovoltaic has become the main force of my country's photovoltaic grid-connected system. At present, the main raw materials of photovoltaic cells are divided into monocrystalline silicon wafers and polycrystalline silicon wafers. Polycrystalline silicon wafers have the advantages of high production efficiency and low manufacturing cost, and occupy a pivotal position in the photovoltaic market. In the production process of polysilicon wafers, the quality of cutting technology directly affects the quality of silicon wafers. The currently used manufacturing process is to use multiple sets of steel wires to drive the mortar, which is made of SiC and PEG, and the particles in the mortar are used to rub against polysilicon ...
Claims
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IPC IPC(8): B28D5/04B28D7/00B08B3/02B08B3/12
CPCB08B3/02B08B3/12B28D5/0058B28D5/007B28D5/045
Inventor 刘巍李宁荆新杰李佩剑韩庆辉张韶鹏
Owner YANGGUANG GUIFENG ELECTRONICS SCI & TECH CO LTD