Image combination detection method and device for silicon wafer distribution state

Abstract

A silicon wafer distribution state image combination detection method and device. The device comprises an image sensing unit (9) disposed above a silicon wafer group (2) and a photoelectric / ultrasonic scanning unit (4,5 / 6,7) disposed on a manipulator (1), wherein the photoelectric / ultrasonic scanning unit (4,5 / 6,7), driven by the manipulator (1), carries out horizontal or vertical positioning. In the method, in an image collection mode in a first detection stage, an abnormal state limit position pre-scanning instruction for the protruding silicon wafer is executed; in a mode in which the photoelectric scanning / ultrasonic scanning unit works firstly and then performs self reception and performs ranging in a second detection stage, a cyclic scanning instruction for all silicon wafers above the pre-scanned protruding wafer is carried out; in a third detection stage, the mode is converted into a mutual reception working mode, and a silicon wafer distribution state anomaly scanning instruction is executed; in a fourth detection stage, the mode is again converted into a self reception working mode, and a cyclic scanning instruction for all silicon wafers below the pre-scanned protruding wafer is executed; and multiple scanning and detection points are distributed around a loader (3), thereby further improving the detection precision.

Description

technical field [0001] The present invention relates to the technical field of semiconductor processing equipment, in particular to a method for combined detection of silicon chip distribution state images in a semiconductor device carrying area, and also relates to a silicon chip distribution state image combination detection device for a semiconductor device carrying area. Background technique [0002] The safe access and transportation of silicon wafers is a very important technical indicator of large integrated circuit production lines. During the production process, it is usually required that the silicon wafer fragmentation rate caused by the transportation equipment itself should be less than one in 100,000. Moreover, as a batch silicon wafer heat treatment system, compared with a single-wafer process system, each production process requires more times of silicon wafer transmission, silicon wafer placement and removal, so the silicon wafer transfer, silicon wafer place...

AI Technical Summary

Problems solved by technology

[0007] At present, the identification of the distribution state of the silicon wafers in the batch type silicon wafer heat treatment system generally adopts a simple photoelectric signal motion scanning method to identify the distribution state of the silicon wafers on the carrier 3. When the silicon wafer is in an abnormal state such as stacked wafers, inclined wafers or no wafers, it has a certain detection effect, but if the silicon wafer is in a protruding state on the carrier 3, it cannot be detected well, that is to say, by The existing technology simply obtains abnormal or normal results, but it is still easy to cause collisions during the motion scanning process, resulting in damage to the silicon wafer or equipment, and often produces false positives and false positives

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