Chemical machinery planarization process method

A chemical-mechanical and process method technology, applied in the field of chemical-mechanical planarization, can solve problems such as circuit failure yield rate, influence device performance, and reduction, and achieve the effects of reducing metal loss and improving performance and yield.

Active Publication Date: 2015-10-14
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, under the current process conditions, the material removal rate of W formed by ALD is much higher than that of W formed by CVD, which

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical machinery planarization process method
  • Chemical machinery planarization process method
  • Chemical machinery planarization process method

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0021] The embodiments of the present invention are described in detail below. Examples of the embodiments are shown in the accompanying drawings, in which the same or similar reference numerals indicate the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary, and are only used to explain the present invention, and cannot be construed as limiting the present invention.

[0022] In the present invention, in the ALD metal tungsten planarization process, the problem of excessively large removal rate causing large loss of other layers is solved. For this, as figure 1 As shown, the present invention proposes the following technical solutions:

[0023] Use atomic layer deposition method to fill metal tungsten;

[0024] The first removal process and the second removal process are performed to realize the chemical mechanical planarization of the metal tungsten, wherein the pressure...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a chemical machinery planarization process method. The method comprises the following steps: filling metallic tungsten by use of an atomic layer deposition method; carrying out a first removal process and a second removal process so as to realize chemical machinery planarization of the metallic tungsten, wherein the pressure and the rotating speed in the second removal process are respectively smaller than the pressure and the rotating speed in the first removal process. According to the invention, the chemical machinery planarization of the metallic tungsten is realized by use of a two-step removal process, and the pressure and the rotating speed in the later removal process are reduced, such that the mechanical effect in a grinding process is reduced in the second removal process, metal loss at the top of a metal gate can be reduced, and the performance and the yield of a device are improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a chemical mechanical planarization process method. Background technique [0002] At present, the gate-last process is currently widely used in the manufacture of advanced integrated circuit processes. It usually forms the dummy gate and source and drain regions first, then removes the dummy gate and refills the replacement gate of the high-k metal gate stack in the gate trench. . Since the gate is formed after the source and drain, the gate does not need to withstand a high annealing temperature in this process, and the selection of gate layer materials is wider and can better reflect the intrinsic characteristics of the material. [0003] In the prior art, conventional methods such as chemical vapor deposition (CVD) and physical vapor deposition (PVD) are often used to prepare Al, Mo and other metals as the metal filling layer for replacing the gate. However, the ste...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/768H01L21/321
Inventor 杨涛卢一泓张月崔虎山赵超李俊峰
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap