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Substrate processing method and substrate processing apparatus

A substrate processing method, substrate technology, applied in the direction of cleaning method, chemical instrument and method, cleaning method and utensils, etc.

Active Publication Date: 2019-07-26
DAINIPPON SCREEN MTG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the deformation of the substrate is not limited to the case of sequentially supplying high-temperature SPM and normal-temperature DIW, and may also occur when other processing liquids with temperature differences are sequentially supplied to the substrate.

Method used

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  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus

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Experimental program
Comparison scheme
Effect test

no. 2 Embodiment approach

[0175] Next, a second embodiment of the present invention will be described. under the Figure 10 ~ Figure 14 In, with respect to the aforementioned Figure 1 to Figure 9 The same components as those shown in each part are given with figure 1 The same reference numerals are used to omit descriptions thereof.

[0176] Figure 10 It is a plan view of the spin chuck 5 according to the second embodiment of the present invention. Figure 11 It is a front view of the spin chuck 5 according to the second embodiment of the present invention. Figure 12 It is a schematic plan view showing the nozzle 245 on the lower surface. Figure 13 It is a schematic cross-sectional view showing the internal structure of the lower surface nozzle 245 .

[0177] Such as Figure 10 as well as Figure 11 As shown, instead of the lower surface nozzle 45 of the first embodiment, the processing unit 2 may include a lower surface nozzle 245 capable of changing the distance from the substrate rotatio...

no. 3 Embodiment approach

[0193] Next, a third embodiment of the present invention will be described. under the Figure 15 ~ Figure 16 , for the previously discussed Figure 1 to Figure 14 The parts of the structure that are the same as the parts represented in are labeled with figure 1 The same reference numerals are used, and descriptions thereof are omitted.

[0194] Figure 15 It is a schematic view of the inside of the chamber 4 provided in the substrate processing apparatus 1 according to the third embodiment of the present invention viewed horizontally.

[0195] In addition to the structure in the first embodiment, the processing unit 2 further includes: a central nozzle 311A ​​having a central ejection port 311a for ejecting the reaction liquid toward the center of the upper surface of the substrate W; The peripheral nozzle 311c has a peripheral nozzle 311c that discharges the reaction solution to the peripheral portion of the upper surface of the substrate W. The central nozzle 311A, the ...

no. 4 Embodiment approach

[0209] Next, a fourth embodiment of the present invention will be described. under the Figure 19 ~ Figure 21 , for the aforementioned Figure 1 to Figure 18 The components that are the same as those shown in each part are assigned the same figure 1 The same reference numerals are used, and descriptions thereof are omitted.

[0210] Such as Figure 19 As shown, the processing unit 2 includes: a pure water piping 426 for guiding pure water from a pure water supply source into the first chemical solution piping 14; a pure water valve 427 for opening and closing the inside of the pure water piping 426; The flow regulating valve 428 is used to increase or decrease the flow rate of the pure water supplied from the pure water pipe 426 to the first chemical solution pipe 14 . The downstream end of the pure water piping 426 is connected to the first chemical solution piping 14 at a position upstream of the stirring piping 15 .

[0211] When the sulfuric acid valve 19 and the hydr...

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Abstract

The invention provides a substrate processing method and a substrate processing device. The substrate processing method includes: an SPM supply process of supplying high-temperature SPM to the upper surface of the substrate; a DIW supply process of rinsing liquid remaining on the substrate by supplying DIW at room temperature to the upper surface of the substrate after the SPM supply process The hydrogen peroxide supply process, after the SPM supply process and before the DIW supply process, in the state where the SPM remains on the substrate, the liquid temperature is lower than the temperature of the SPM and the hydrogen peroxide is supplied to the upper surface of the substrate at room temperature.

Description

technical field [0001] The present invention relates to a substrate processing method and a substrate processing device for processing a substrate. The substrates to be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for plasma displays, substrates for FED (Field Emission Display: field emission displays), substrates for optical discs, substrates for magnetic disks, substrates for magneto-optical discs, optical Mask substrates, ceramic substrates, solar cell substrates, etc. Background technique [0002] In a manufacturing process of a semiconductor device, a liquid crystal display device, or the like, processing liquids having different temperatures may be sequentially supplied to the substrate while the substrate is rotated by a spin chuck. For example, Japanese Unexamined Patent Publication No. 2009-238862 discloses: after supplying high-temperature SPM (Sulfuric Acid-Hydrogen Peroxide Mixture: sulfuric acid...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/67B08B3/04
CPCH01L21/67028H01L21/67051C11D3/0052C11D2111/44C11D2111/46C11D2111/22B08B3/02B08B3/08B08B3/10
Inventor 根来世村元僚永井泰彦大须贺勤岩田敬次
Owner DAINIPPON SCREEN MTG CO LTD