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Rheotaxy method of low-temperature grown variable-component gallium arsenic antimony thin film

A technology of liquid phase epitaxy and variable composition, which is applied in the direction of liquid phase epitaxy layer growth, single crystal growth, crystal growth, etc., can solve the problems of incapable thin film materials, etc., and achieve excellent crystal quality, simple and easy preparation process, and low cost Effect

Active Publication Date: 2015-10-28
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

[0016] The purpose of the present invention is to provide a liquid phase epitaxy technology for growing variable-composition gallium-arsenic-antimony thin films at low temperature, which solves the problem that liquid-phase epitaxy technology cannot prepare variable-composition GaAs at low temperature 1-x Sb x Difficulties with Thin Film Materials

Method used

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  • Rheotaxy method of low-temperature grown variable-component gallium arsenic antimony thin film
  • Rheotaxy method of low-temperature grown variable-component gallium arsenic antimony thin film
  • Rheotaxy method of low-temperature grown variable-component gallium arsenic antimony thin film

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Embodiment Construction

[0025] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings:

[0026] First, prepare three GaAs saturated melt sources of the same quality at 550°C according to the phase diagram, and place the cleaned and corroded melt source materials (7N Ga, undoped GaAs single crystal wafer) and undoped GaAs single crystal substrate Put it into the corresponding cavity of the graphite boat, put it into a quartz tube, quickly raise the temperature to 650°C at a rate of 15°C / min and keep the temperature constant for 3 hours, then lower the temperature to 570°C at a rate of 10°C / min, and push the boat to melt The source is in contact with the GaAs single crystal substrate for 12 minutes, and then the temperature is raised to 650°C for 1 hour, and then the fan is turned on to quickly drop the melting source temperature to room temperature, and the initial melting source material with a certain ratio is obtained. Th...

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Abstract

The invention discloses a rheotaxy method of a low-temperature grown variable-component gallium arsenic antimony thin film. The method comprises the following specific steps that 1, a melting source is weighed; 2, high-temperature melting is carried out on the melting source twice; 3, growing is carried out. The method is characterized in that Sb components are not prepared according to a phase diagram. The method has the advantages that the GaAsl-xSbx variable-component thin film can be obtained at low temperature, the preparation process is simple, process cost is low, and the crystalline quality is high.

Description

Technical field [0001] The invention belongs to the field of medium-wave infrared detector materials and devices, and specifically relates to the preparation of low-temperature growth GaAs-based variable composition GaAs using traditional liquid phase epitaxy technology 1-x Sb x Film material. Background technique [0002] GaAsSb / GaAs quantum wells have great application potential in optoelectronic devices and electronic devices [1,2], because the band structure of GaAsSb / GaAs quantum wells has a huge change with the increase of Sb composition. By changing the concentration of the Sb component, not only the energy band width can be adjusted, but also the quantum well energy band arrangement can be adjusted between the first type and the second type [3-7]. Different energy band arrangements have different physical properties, which is one of the main reasons why GaAsSb / GaAs quantum wells attract domestic and foreign experts to study. [0003] Due to the different bonding behavior o...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B19/02C30B29/40C30B29/64
Inventor 王洋胡淑红吕英飞戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI