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Thin film transistor array substrate and manufacturing method thereof

A technology for thin film transistors and array substrates, which is applied in the field of thin film transistor array substrates and their production, can solve the problems of high cost and low production efficiency of thin film transistor array substrates, and achieve the effects of saving production costs and improving production efficiency.

Inactive Publication Date: 2015-11-18
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For the above two independent steps, two different NormalMask (ordinary mask) photomask processes are required, which leads to the high cost of the above technical solution, and makes the production efficiency of the thin film transistor array substrate not high

Method used

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  • Thin film transistor array substrate and manufacturing method thereof
  • Thin film transistor array substrate and manufacturing method thereof
  • Thin film transistor array substrate and manufacturing method thereof

Examples

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Embodiment Construction

[0026] The word "embodiment" as used in this specification means an example, instance or illustration. Furthermore, as used in this specification and the appended claims, the article "a" or "an" may generally be construed as "one or more" unless specified otherwise or clear from the context in the singular.

[0027] The display panel of the present invention may be a TFT-LCD (ThinFilmTransistorLiquidCrystalDisplay, thin film transistor liquid crystal display panel).

[0028] refer to Image 6 , Image 6 It is a schematic diagram of the thin film transistor array substrate of the present invention.

[0029] The TFT array substrate of the present invention includes a device combination board 101 , a passivation layer 201 and a pixel electrode layer 601 .

[0030] The device assembly board 101 includes a substrate 1011 , a first signal line layer 1012 , a semiconductor layer 1014 and a second signal line layer 1017 . The device combination board 101 further includes a first i...

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Abstract

The invention discloses a thin film transistor array substrate and a manufacturing method thereof. The thin film transistor array substrate comprises a device combination plate, a passivation layer, and a pixel electrode layer; the device combination plate comprises a substrate, a first signal line layer, a semiconductor layer and a second signal line layer; the passivation layer is disposed on the device combination layer, the passivation layer is provided with a hole and a groove array, and the groove array comprises at least one groove; and the pixel electrode layer is disposed on the passivation layer and in the groove array, and the pixel electrode layer is connected with the second signal line layer through the hole. Manufacturing cost of the thin film transistor array substrate can be saved, and manufacturing efficiency of the thin film transistor array substrate can be improved.

Description

【Technical field】 [0001] The invention relates to the field of display technology, in particular to a thin film transistor array substrate and a manufacturing method thereof. 【Background technique】 [0002] The manufacturing process of the traditional thin film transistor array substrate generally needs to provide through holes on the passivation layer, and to arrange grooves on the passivation layer, and to arrange the surface on the passivation layer and the grooves. pixel electrode layer. Wherein, the pixel electrode layer is connected to the data line layer in the thin film transistor array substrate through the through hole. [0003] In the above conventional technical solution, the provision of the through hole on the passivation layer and the recess on the passivation layer are implemented separately, that is to say, the provision of the groove on the passivation layer The via hole and providing the groove on the passivation layer are two separate steps. [0004] F...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12
CPCG02F1/133345G02F1/134309G02F1/136227G02F2201/123G02F1/136236G02F1/13685H01L27/1248H01L27/1288H01L29/78669H01L29/78678G02F1/136286G02F1/1368G02F1/13629H01L29/78675
Inventor 甘启明
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD