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Conductive carbon felt-supported iron-doped mesoporous titanium oxide gas diffusion photoelectrode and preparation method thereof

A conductive carbon felt and gas diffusion technology, applied in chemical instruments and methods, separation methods, greenhouse gas capture, etc., can solve the problems of restricting industrial production and practical application, low photoelectric catalytic activity, small specific surface area, etc. Industrial production, high gas diffusion performance, large specific surface area

Active Publication Date: 2016-12-07
JISHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

We know that non-porous conductive substrate loaded TiO 2 Due to its small specific surface area and low photocatalytic activity, the electrode also affects and restricts its industrial production and practical application.

Method used

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  • Conductive carbon felt-supported iron-doped mesoporous titanium oxide gas diffusion photoelectrode and preparation method thereof
  • Conductive carbon felt-supported iron-doped mesoporous titanium oxide gas diffusion photoelectrode and preparation method thereof
  • Conductive carbon felt-supported iron-doped mesoporous titanium oxide gas diffusion photoelectrode and preparation method thereof

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preparation example Construction

[0042] The preparation process of the present invention comprises:

[0043] 1) Using titanium tetrachloride as the starting material, using the liquid crystal of the surfactant "sodium perfluorooctanoate" as the soft template, under the action of liquid phase, synthesize the "liquid crystal-inorganic precursor" solution. The hydrochloric acid solution of titanium tetrachloride and ferric nitrate is first added into the three-necked flask together, and the liquid crystal is added through the funnel, and the dropping rate is generally controlled at 0.1–0.5ml·min -1 between; synthesis of "liquid crystal-inorganic precursor" solution;

[0044] 2) Put the "liquid crystal-inorganic precursor" solution into the spray device, the optimal distance between the spray nozzle and the conductive carbon felt is 40cm-50cm, air atomization nozzle, flow rate 0.01-0.05ml / min, pressure 2-10Mpa , temperature 20–30°C, relative humidity 80–90%;

[0045] 3) Add "TiO 2 –Fe-Liquid Crystal” / CF is pla...

Embodiment 1

[0048] Embodiment 1: at first sodium perfluorooctanoate (30g) and distilled water (60ml) form liquid crystal, secondly, adopt liquid phase method, with 60g purity be 99.0% titanium tetrachloride, 2g ferric nitrate, 60ml distilled water and 5ml concentrated hydrochloric acid alcohol (one A mixture of 35% concentrated hydrochloric acid and two parts by weight of 75% ethanol (the same below) is mixed, the pH value is controlled between 1-3, added into a three-necked bottle, and stirred evenly with a GS122 electronic constant speed stirrer. Then add the above-mentioned liquid crystal into the three-necked bottle to form a "liquid crystal-inorganic precursor" solution; in addition, put 11g of conductive carbon felt (10cm×7cm) into the sprayer, and the optimal distance between the nozzle and the conductive carbon felt is 40cm. Temperature 20°C, relative humidity 80%, spray pressure 2MPa, spray flow rate 0.01ml / min, spray volume 500ml / dm 2 . Obtain "liquid crystal-inorganic precurso...

Embodiment 2

[0050] Embodiment 2: at first sodium perfluorooctanoate (30g) and distilled water (60ml) form liquid crystal, secondly, adopt liquid phase method, after 60g purity is 99.0% titanium tetrachloride, 2g ferric nitrate, 60ml distilled water and 5ml concentrated hydrochloric acid alcohol are mixed , control the pH value between 1–3, add it into a three-necked bottle, and stir well with a GS122 electronic constant speed stirrer. Then add the liquid crystal into the three-necked bottle to form a "liquid crystal-inorganic precursor" solution; in addition, put 11g of conductive carbon felt (10cm×7cm) into the sprayer, the optimal distance between the nozzle and the conductive carbon felt is 40cm, and the internal temperature 20°C, relative humidity 85%, spray pressure 6MPa, spray flow rate 0.02ml / min, spray volume 400ml / dm 2 . Obtain "liquid crystal-inorganic precursor" / CF complex. Then it was put into a Soxhlet extractor, and the number of extractions was 2 times (the amount of each...

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Abstract

The invention relates to a conductive carbon felt loaded ferric ferric-doped mesoporous titanium oxide gas diffuse photoelectrode and a preparation method therefore. An efficient gas diffusion photoelectrode (TiO2-Fe)mp. / CF mesoporous loaded composite nano material is prepared by adopting a liquid crystal template method and a spray coating technology. The method has the remarkable characteristics that the conductive carbon felt loaded mesoporous (TiO2-Fe) composite nano material with a special structure and the efficient gas diffusion photoelectrode is prepared by applying the spray coating technology and the liquid crystal template method, thereby providing a novel path for application and research of a porous material loaded mesoporous doped TiO2 photocatalytic material. The conductive carbon felt loaded ferric ferric-doped mesoporous titanium oxide gas diffuse photoelectrode is simple in process and easy for industrial production. The prepared efficient gas diffusion photoelectrode mesoporous loaded composite material is good in conductivity, large in specific surface area and uniform in pore distribution.

Description

technical field [0001] The invention relates to a conductive carbon felt-loaded iron-doped mesoporous titanium oxide gas diffusion photoelectrode and a preparation method thereof, belonging to the field of functional materials. Background technique [0002] TiO 2 Because of its biological and chemical inertness, no photocorrosion and chemical corrosion, and low price, it has been proved to be the most widely used photocatalyst. Due to TiO 2 The electron distribution of is characterized by the presence of a band gap between its conduction and valence bands. When illuminated, as long as the energy of the photon is equal to or exceeds the band gap energy of the semiconductor (hν≥E g ), the electrons can transition from the valence band to the conduction band, thereby generating conduction band electrons and valence band holes. Under the action of the electric field of the space charge layer, the free electrons in the conduction band quickly migrate to the surface of the sem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/745B01J20/20B01J20/30B01D53/86B01D53/72
CPCY02C20/30
Inventor 李佑稷李铭林晓
Owner JISHOU UNIVERSITY
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