Cleaning system for wet etching

A cleaning system and wet etching technology, applied in the cleaning method using liquid, the cleaning method using gas flow, the cleaning method and the utensils, etc., can solve the problem that the middle position of the equipment is not easy to clean, the dust particles of the equipment increase, and the engineer is difficult to work. and other problems to achieve the effect of improving equipment utilization rate, reducing labor waste, and avoiding particle increase

Inactive Publication Date: 2015-11-25
HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD +1
View PDF8 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method also faces practical problems. One is that each cleaning will take about 30 minutes by an engineer, plus the resulting equipment stagnation time, each cleaning takes about 60 minutes, which takes up 8.3% of the equipment’s work every day. Second, because the equipment is wide, the middle position of the equipment is not easy to clean, and it is difficult for engineers to work; Third, if the equipment chamber is opened for a long time, it is easy to increase the dust particles of the equipment and affect the product yield.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cleaning system for wet etching
  • Cleaning system for wet etching
  • Cleaning system for wet etching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] Embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but should not be used to limit the scope of the present invention.

[0029] In the description of the present invention, it should be noted that unless otherwise specified, the meaning of "plurality" is two or more; the terms "upper", "lower", "left", "right", "inner ", "outside", "front end", "rear end", "head", "tail", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and Simplified descriptions, rather than indicating or implying that the device or element referred to must have a particular orientation, be constructed and operate in a particular orientation, and thus should not be construed as limiting the inventi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technical field of display, and in particular to a cleaning system for wet etching. The cleaning system comprises a cleaning unit, an etching section, a buffer section and a cleaning section, wherein the etching section, the buffer section and the cleaning section are communicated in sequence. An air knife unit is arranged on an inlet of the cleaning section, and the cleaning unit is arranged corresponding to the air knife unit and used for cleaning the air knife unit. According to the cleaning system, etching liquid crystals and dust particles attached to edges and peripheries of air knives are effectively removed through the cleaning unit. The cleaning system can replace manpower to clean the air knives, the working ratio of equipment is increased, the cleaning effect is ensured, and meanwhile manpower waste is reduced to the maximum extent. Meanwhile, the situation that due to the fact that an equipment chamber is opened for a long time, particles in the equipment are increased, and the yield of products is influenced can be avoided.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a cleaning system for wet etching. Background technique [0002] With the maturity of TFT-LCD (English name is ThinFilmTransistor-LiquidCrystalDisplay, Chinese name is Thin Film Field Effect Transistor-Liquid Crystal Display) technology in the 1990s, the liquid crystal display panel is due to its brightness, contrast, power consumption, life, volume and weight. The advantages of comprehensive performance have been developed rapidly. [0003] In recent years, TFT-LCD has gradually developed towards large size and high resolution, and the resistance of the metal line is particularly important, because it is an important factor causing the delay of the resistance-capacitance (RC) signal. Metal wires using copper instead of traditional aluminum have the advantages of low resistance, high film layer uniformity, and high aperture ratio. At present, copper technology has become a hot ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B08B3/02B08B5/02
CPCB08B3/02B08B5/02H01L21/67051H01L21/6708H01L21/67253H01L21/6776H01L27/1244H01L27/1259H01L27/1262
Inventor 刘小宁郑载润王世凯金童燮耿军李登涛梁渲祺黄腾飞
Owner HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap