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Three-wavelength correction-free infrared monitoring method and device for mocvd epitaxial growth

A technology of infrared monitoring and epitaxial growth, applied in the direction of measuring devices, optical devices, electric radiation detectors, etc., can solve problems such as complex correction and calibration, and achieve the effect of reducing volume

Inactive Publication Date: 2017-12-22
SHANGLUO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that the in-situ infrared monitoring technology currently applied to MOCVD requires complex correction and calibration, and to provide a method that does not need to correct the effective area and reflectivity of the detection hole, and can simultaneously measure the temperature of the epitaxial wafer and the epitaxial layer. A three-wavelength in-situ infrared monitoring method for film thickness, and a three-wavelength correction-free in-situ infrared monitoring device that can simultaneously monitor the surface temperature of the epitaxial wafer and the thickness of the epitaxial layer by applying the method

Method used

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  • Three-wavelength correction-free infrared monitoring method and device for mocvd epitaxial growth
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  • Three-wavelength correction-free infrared monitoring method and device for mocvd epitaxial growth

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Embodiment 1

[0044] The steps of the three-wavelength correction-free infrared monitoring method for MOCVD epitaxial growth of the present embodiment are as follows: see figure 1 , figure 2 , image 3 .

[0045] Step 1, measure the system parameter K of the infrared monitoring device: the K value is related to the 45° dichroic filter 12, the 135° dichroic filter 15, the right filter 13, the left filter 16, the upper filter Sheet 18 and the transmittance of optical window 2, splitting ratio, absorption coefficient, also related to the quantum efficiency of the right photodetector 14, left photodetector 17, upper photodetector 19 and the feedback resistance used by the operational amplifier In addition, it is also related to the distance from the radiation source to the detector. Corresponding to the monitoring device made on the fixed MOCVD system, it only needs to measure the system parameters once. A device simulating the MOCVD optical window 2 and joint 9 is installed at the light o...

Embodiment 2

[0064] Embodiment 2 is the same as Embodiment 1, except that for low-temperature MOCVD epitaxial growth (temperature lower than 550° C.), three longer infrared detection wavelengths are determined according to the law of blackbody radiation, especially the W. Wien shift law. At the same time, the 45° dichroic filter 12 and the 135° dichroic filter 14 select appropriate transmission and reflection bands, transmittance, and reflectance. The right filter 13, the left filter 16, and the upper filter 18 select the center wavelength corresponding to the three detection wavelengths, and the half-peak width is 10 nm. Other processes are all the same as in Example 1.

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Abstract

The invention discloses a three-wavelength correction-free infrared monitoring method and a device for the MOCVD epitaxial growth. The method comprises the steps of firstly, measuring the system parameters of three light sensation detectors on an infrared monitoring device; secondly, based on a film thickness interference model and the Kirchhoff law, giving three detection wavelength emissivity expressions according to the refractive indexes and the extinction coefficients of an epitaxial layer and a substrate under different wavelengths; thirdly, measuring the radiation intensities of three wavelengths to obtain an equation set; fourthly, solving the equation set to obtain the temperature of an epitaxial wafer and the thickness of the epitaxial layer. In this way, the in-situ monitoring is realized. The device comprises a beam splitter cavity arranged in a monitoring probe box. An upper light sensation detector is arranged in the upper part of the beam splitter cavity. A left light sensation detector and a right light sensation detector are arranged on the two sides of the beam splitter cavity in the up-down staggered manner. Light inlet and outlet holes are arranged between each light sensation detector and the beam splitter cavity of the monitoring probe box. Corresponding to the light inlet and outlet holes, a dichroic optical filter is respectively arranged inside the beam splitter cavity of the monitoring probe box. According to the technical scheme of the invention, the effective area and the reflectivity of a probe hole are not required to be modified. At the same time, the temperature of the epitaxial wafer and the thickness of the epitaxial layer can be monitored in the in-situ manner.

Description

technical field [0001] The invention relates to the field of in-situ infrared monitoring, in particular to a method for in-situ infrared monitoring of temperature and epitaxial film thickness in a complex and variable environment in a metal organic chemical vapor deposition (MOCVD) reaction chamber, and a three-wavelength correction-free temperature measurement, film Thick monitoring device. Background technique [0002] Metal Organic Chemical Vapor Deposition (MOCVD for short) is the core equipment for producing LED epitaxial wafers. During the epitaxial growth of high-quality semiconductor thin films by MOCVD, parameters such as the temperature and uniformity in the reaction chamber, the growth rate of the epitaxial layer, and the thickness of the film will affect the quality of the growth material and the performance of the final device. For example: in the indium-doped process of growing GaN-based multi-quantum well structure LED epitaxial wafers with Si(111) as the sub...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/10G01B11/06
Inventor 杨超普周春生刘明宝耿西侠李春张国春刘彦峰张美丽
Owner SHANGLUO UNIV