Flexible piezoresistive pressure sensor with high sensitivity, and preparing method thereof

A pressure sensor and high-sensitivity technology, which is applied in the field of flexible piezoresistive pressure sensors and its preparation, can solve the problems of poor biocompatibility, and achieve the effect of making up for the defects of non-bendable deformation and improving sensitivity

Active Publication Date: 2015-11-25
SOUTHEAST UNIV
View PDF7 Cites 48 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the silicon-based piezoresistive pressure sensor with this structure is inflexible and has poor biocompatibility, which leads to the urgent need for the use of pressure sensors in many fields such as biomedicine and wearable devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flexible piezoresistive pressure sensor with high sensitivity, and preparing method thereof
  • Flexible piezoresistive pressure sensor with high sensitivity, and preparing method thereof
  • Flexible piezoresistive pressure sensor with high sensitivity, and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The technical solutions of the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0041] like figure 1 and figure 2 As shown, a flexible piezoresistive pressure sensor with high sensitivity according to an embodiment of the present invention includes a flexible substrate 1 , metal electrodes 2 , and a grid-shaped graphene film layer 3 . The metal electrodes 2 are fixedly connected to both ends of the top surface of the flexible substrate 1 , and the graphene film layer 3 covers and connects to the flexible substrate 1 and part of the metal electrodes 2 . Preferably, the metal electrode 2 is gold, silver, copper, aluminum, platinum or titanium.

[0042] As a preferred solution, the flexible substrate 1 includes an LCP board 101 , a first LCP film 102 and a second LCP film 103 . The LCP board 101 is fixedly connected between the first LCP film 102 and the second LCP film 103 , the LCP board 101 is p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a flexible piezoresistive pressure sensor with high sensitivity. The pressure sensor comprises the components of a flexible substrate, metal electrodes and a grid-shaped graphene film layer. The metal electrodes are fixedly connected with two ends of the top surface of the flexible substrate. The graphene film layer covers and is connected with the flexible substrate and partial metal electrodes. The pressure sensor has an advantage that the substrate can perform bending deformation and furthermore has high sensitivity. The pressure sensor can be widely used in the fields of biomedicine, wearable device, etc. Furthermore the invention discloses a preparation method for the flexible piezoresistive pressure sensor.

Description

technical field [0001] The invention relates to a pressure sensor, in particular to a flexible piezoresistive pressure sensor with high sensitivity and a preparation method thereof. Background technique [0002] Traditional silicon-based pressure sensors are rarely used in many fields such as biomedicine and wearable devices due to the inflexibility of their substrates. At the same time, there is an urgent need for flexible substrate pressure sensors that can be bent and deformed for use in many fields. The structure of the existing silicon-based piezoresistive pressure sensor is to make four pressure-sensitive resistors in the stress concentration area by diffusion or ion implantation on a square or circular silicon strained film, and the four resistors are interconnected to form a Whiston bridge. Through the Wheatstone bridge, the change of the resistance value of the four pressure-sensitive resistors caused by the external pressure is converted into an output voltage, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/18
Inventor 聂萌章丹黄庆安
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap