Smoothing device, smoothing method, thin film transistor, display substrate, and display device

Abstract

The invention discloses a smoothing device, a smoothing method, a thin film transistor, a display substrate and a display device. The smoothing device comprises: a cavity, a plasma generating component, a magnetic field generating component, an electric field generating component, and a stage located in the cavity; The plasma generated by the plasma generating part is subjected to the Lorentz force parallel to the surface of the object to be smoothed under the action of the magnetic field generated by the magnetic field generating part, and is subjected to a force perpendicular to the surface of the object to be smoothed under the action of the electric field generated by the electric field generating part. And point to the electric field force in the direction of the object to be smoothed; like this, the plasma moves towards the direction close to the object to be smoothed under the joint action of the Lorentz force and the electric field force, and when the plasma reaches the surface of the object to be smoothed, the plasma can be The body selectively reacts with the atoms on the raised part of the object to be smoothed, so that the surface roughness of the object to be smoothed can be reduced without damaging the overall surface of the object to be smoothed.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a smoothing device, a smoothing method, a thin film transistor, a display substrate and a display device. Background technique [0002] In existing display devices, the surface roughness of some film layers will affect the performance of the display device. For example, in the existing thin film transistor (Thin Film Transistor, TFT) that uses polysilicon layer as the active layer, due to the presence of protrusions at the boundary where crystal grains meet in the polysilicon layer (ie, at the grain boundary), the polysilicon layer will be distorted. The surface roughness is large, that is, the surface roughness of the active layer is large, which will cause a large leakage current of the TFT; and, in order to flatten the surface roughness of the active layer, a thicker gate insulating layer needs to be formed, However, a thicker gate insulating layer will reduce the response s...

AI Technical Summary

Problems solved by technology

[0002] In existing display devices, the surface roughness of some film layers will affect the performance of the display device

For example, in the existing thin film transistor (Thin Film Transistor, TFT) that uses polysilicon layer as the active layer, due to the presence of protrusions at the boundary where crystal grains meet in the polysilicon layer (ie, at the grain boundary), the polysilicon layer will be distorted. The surface roughness is large, that is, the surface roughness of the active layer is large, which will cause a large leakage current of the TFT; and, in order to flatten the surface roughness of the active layer, a thicker gate insulating layer needs to be formed, However, a thicker gate insulating layer will reduce the response speed, drive current and storage capacitance of the TFT, and will also make the threshold voltage drift more obvious.

[0003] At present, the existing method for reducing the surface roughness of the polysilicon layer is generally to use an acid solution to etch the polysilicon layer. However, the acid solution will also etch Etch the recessed part in the polysilicon layer, thereby damaging the overall surface of the polysilicon layer, which will affect the performance of the TFT

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