Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for forming semiconductor device

A semiconductor and device technology, applied in the field of semiconductor device formation, can solve the problems of poor nanowire morphology and poor formation performance of fully enclosed gate nanowire transistors, and achieve the effects of performance improvement, process cost reduction, and uniformity improvement.

Active Publication Date: 2018-06-29
SEMICON MFG INT (SHANGHAI) CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the nanowires formed by the prior art have poor morphology, resulting in poor formation performance of the formed gate-all-around nanowire transistors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming semiconductor device
  • Method for forming semiconductor device
  • Method for forming semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] As mentioned in the background art, the nanowires formed in the prior art have poor morphology, which leads to poor formation performance of the gate-all-around nanowire transistors formed.

[0034] After research, please refer to figure 1 , figure 1 It is a schematic cross-sectional structure diagram of a nanowire structure embodiment, including: a substrate 100, a number of nanowires 101 suspended above the substrate 100 and arranged in parallel, and the two ends of the nanowires 101 have supports on the surface of the substrate 100 portion, so that the nanowire 100 can be suspended on the substrate 100 . Before forming the gate structure, the nanowire 101 needs to be annealed so that the cross section of the nanowire 101 is circular.

[0035] However, according to the requirements of device design, the spatial distance between each nanowire 101 and surrounding devices is different, for example, the distance A between the nanowire 101a and the nanowire 101b is large...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for forming a semiconductor device, comprising: providing a substrate, the substrate having a first region, a sacrificial layer on the surface of the substrate, and a semiconductor layer on the surface of the sacrificial layer; the semiconductor layer and the sacrificial layer in the first region At least three adjacent first trenches are formed in the layer, the first trenches expose the surface of the substrate, the semiconductor layer between the first trenches forms at least two parallel nanowires, and the adjacent nanowires are formed. The distance between the nanowires is the same, and the nanowires include device nanowires and dummy nanowires; the sacrificial layer at the bottom of the nanowires is removed, so that the nanowires are suspended above the substrate; after removing the sacrificial layer in the first area, the first time The annealing process makes the cross section of the nanowires round; after the first annealing process, the dummy nanowires are removed. The formed semiconductor device has improved morphology and improved performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. Transistors, as the most basic semiconductor devices, are currently being widely used. Therefore, as the component density and integration of semiconductor devices increase, the gate size of transistors is also getting shorter and shorter. However, the shortening of the gate size of the transistor will cause the short-channel effect of the transistor, thereby generating leakage current, and ultimately affecting the electrical performance of the semiconductor device. [0003] In order to overcome the short channel effect of the transistor and suppress the leakage current, the prior art proposes a fully surrounded gate nanowire ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336B82Y10/00
Inventor 洪中山
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products