Formation method of interconnection structure

Abstract

The present invention provides a formation method of an interconnection structure. The formation method of the interconnection structure comprises the steps of providing a substrate; forming a first metal layer possessing the grains of a first size on the substrate, processing the first metal layer possessing the grains of the first size, and converting the grains of the first size into the grains of a second size, wherein the second size is greater than the first size; after the first metal layer possessing the grains of the first size is formed, adopting a plasma etching machine to etch the first metal layer, removing a part of the first metal layer to form a first conductive structure. The beneficial effects of the present invention are that: the grain size in the first metal layer is increased, so that when electrons are transmitted in the first metal layer, the probability that the electrons reach the boundaries of the grains is reduced, and accordingly, the phenomenon that the electrons generate the electron scattering at the boundaries of the grains is reduced to a certain extent; the conductivity of the first metal layer is improved, so that the interconnection structure having a higher conductivity is obtained.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming an interconnection structure. Background technique [0002] With the continuous development of integrated circuit manufacturing technology, people have higher and higher requirements on the integration and performance of integrated circuits. In order to meet these requirements as much as possible, new materials and manufacturing processes are used in the prior art to improve the performance of semiconductor devices in integrated circuits. [0003] For example, in the interconnection structure of semiconductor devices, copper gradually replaces traditional aluminum and becomes the main material of conductive structures such as conductive plugs or interconnection lines in the interconnection structure. The reason is that the resistivity of copper is lower than that of aluminum. The size is smaller, the melting point of copper is also higher, and the ...

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Problems solved by technology

[0006] For the aforementioned copper damascene or double damascene process, since copper needs to be filled in smaller-sized holes or openings, the grain size inside the formed copper is generally relatively small, which will result in the above-mentioned grain size. The problem that the smaller particles affect the conductivity of the metal itself

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