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Inverted light-emitting diode (LED) chip structure and manufacturing method thereof

A LED chip and flip-chip technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as the complexity of the isolation groove process, and achieve the effect of reliable structure and performance and avoiding leakage

Inactive Publication Date: 2015-11-25
EPITOP PHOTOELECTRIC TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention provides a flip-chip LED chip structure and its manufacturing method to solve the problem of complicated process in the isolation groove of the LED chip structure in the prior art

Method used

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  • Inverted light-emitting diode (LED) chip structure and manufacturing method thereof
  • Inverted light-emitting diode (LED) chip structure and manufacturing method thereof
  • Inverted light-emitting diode (LED) chip structure and manufacturing method thereof

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Embodiment Construction

[0053] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0054] figure 1 A side view of the flip-chip LED chip structure provided for Embodiment 1 of the present invention, such as figure 1 As shown, the flip-chip LED chip structure provided in this embodiment includes: a substrate 10, an epitaxial layer 11, the epitaxial layer 11 is located on the substrate 10, and the epitaxial layer 11 includes: a buffer layer 110, an intrinsic semiconductor layer (not shown in the figure), the first semiconductor layer 111 , the light emitting layer 112 and the second semiconducto...

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Abstract

The invention provides an inverted light-emitting diode (LED) chip structure and a manufacturing method thereof. According to the method, laser surface shallow cutting is adopted to form a shear mark; and the surface of the shear mark is treated by inductively-coupled plasma (ICP) etching treatment or other treatment methods, so as to obtain an isolation groove which has the same functions as that in the prior art. The isolation groove is covered with an insulating protection layer; and intact and effective barrier protection can be formed on an epitaxial layer of a fracture surface on the side wall of a chip after cutting separation, so that the conditions such as electricity leakage and bad circuit in the chip inverting process are avoided. Compared with the means in the prior art, the structure property is reliable; and the technological means are simple and easy to implement.

Description

technical field [0001] The present invention relates to semiconductor technology, in particular to a flip-chip light emitting diode (Light Emitting Diode, LED for short) chip structure and a manufacturing method thereof. Background technique [0002] Flip-chip LED is a kind of light-emitting diode. Compared with the front-mounted LED, the light-emitting surface of the flip-chip LED is set on the side of the chip close to the substrate. Due to its special structure, it has the characteristics of high current resistance, low voltage, and high luminous efficiency. , no need to wire and other advantages, in recent years have received more and more attention. [0003] The flip-chip LED chip is generally designed as a rectangle, and its structure includes a substrate, an epitaxial layer, a current spreading layer, a reflective layer (which can also be used as a current spreading layer), an insulating layer, a soldering layer and other structures from bottom to top. The epitaxial ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/44H01L33/00
CPCH01L33/02H01L33/005H01L33/44
Inventor 姚禹郑远志陈向东
Owner EPITOP PHOTOELECTRIC TECH
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